JPS5541788A - Integrated thyristor - Google Patents

Integrated thyristor

Info

Publication number
JPS5541788A
JPS5541788A JP11616478A JP11616478A JPS5541788A JP S5541788 A JPS5541788 A JP S5541788A JP 11616478 A JP11616478 A JP 11616478A JP 11616478 A JP11616478 A JP 11616478A JP S5541788 A JPS5541788 A JP S5541788A
Authority
JP
Japan
Prior art keywords
region
type
electrodes
diffusion
fitted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11616478A
Other languages
Japanese (ja)
Inventor
Teruo Kusaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11616478A priority Critical patent/JPS5541788A/en
Publication of JPS5541788A publication Critical patent/JPS5541788A/en
Pending legal-status Critical Current

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  • Thyristors (AREA)

Abstract

PURPOSE: To provide the subject thyristor wherein the gate region is narrowed to reduce the central junction capacitance, and the PN junction capacitance of the emitter short-circuit is reduced in accordance therewith thereby to remarkably increase dv/dt quantity resistance.
CONSTITUTION: Two recessions are formed on a polycrystal Si support 3, N-type regions 1a and 1b are caused to grow therein through dielectric insulation films 2. In one region 1a there is diffusion-formed a P-type anode region 4 and an electrode A is fitted thereto. Further, a P-type gate region 5 is provided in parallel to the region 4, and an N+-type emitter region 6 which becomes a cathode is diffusion- formed, electrodes G and K being fitted to the regions 5 and 6 to form a PNPN thyristor. Further, in another region 1b a P-type region 7 is diffusion-formed, and at one end thereof is provided an N+-type region 8. Electrodes 10 and 9 are fitted in the regions 7 and 8, respectively to form an emitter short-circuit respectively to form an emitter short-circuit resistance layer. Thereafter, the electrodes G and 9 are connected to each other by a conductor 11 and the electrodes K and 10 by a conductor 12.
COPYRIGHT: (C)1980,JPO&Japio
JP11616478A 1978-09-20 1978-09-20 Integrated thyristor Pending JPS5541788A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11616478A JPS5541788A (en) 1978-09-20 1978-09-20 Integrated thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11616478A JPS5541788A (en) 1978-09-20 1978-09-20 Integrated thyristor

Publications (1)

Publication Number Publication Date
JPS5541788A true JPS5541788A (en) 1980-03-24

Family

ID=14680355

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11616478A Pending JPS5541788A (en) 1978-09-20 1978-09-20 Integrated thyristor

Country Status (1)

Country Link
JP (1) JPS5541788A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4567500A (en) * 1981-12-01 1986-01-28 Rca Corporation Semiconductor structure for protecting integrated circuit devices
US4689711A (en) * 1984-11-30 1987-08-25 Robert Bosch Gmbh Monolithically integrated, polarity-reversal protected circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4924372A (en) * 1972-06-28 1974-03-04

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4924372A (en) * 1972-06-28 1974-03-04

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4567500A (en) * 1981-12-01 1986-01-28 Rca Corporation Semiconductor structure for protecting integrated circuit devices
US4689711A (en) * 1984-11-30 1987-08-25 Robert Bosch Gmbh Monolithically integrated, polarity-reversal protected circuit

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