JPS5542365A - Junction destructive write type semiconductor memory unit - Google Patents

Junction destructive write type semiconductor memory unit

Info

Publication number
JPS5542365A
JPS5542365A JP11580378A JP11580378A JPS5542365A JP S5542365 A JPS5542365 A JP S5542365A JP 11580378 A JP11580378 A JP 11580378A JP 11580378 A JP11580378 A JP 11580378A JP S5542365 A JPS5542365 A JP S5542365A
Authority
JP
Japan
Prior art keywords
junction
emitter
base
collector
base junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11580378A
Other languages
Japanese (ja)
Inventor
Minoru Enomoto
Kenjiro Yasunari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11580378A priority Critical patent/JPS5542365A/en
Publication of JPS5542365A publication Critical patent/JPS5542365A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/06—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using diode elements

Landscapes

  • Read Only Memory (AREA)

Abstract

PURPOSE:To make it possible to prevent the destruction of collector-base junction by lowering a write voltage by thinning an insulating film near the exposed emitter- base junction. CONSTITUTION:By part of oxide film 8 passivating a semiconductor surface, oxide film 8 near exposed emitter-base junction on a base region surface is thinned to form thin film 8a, on which electrode 9a is provided. Applying this electrode with a voltage inducing several carriers in a base region restrains the expansion of a depletion layer from the emitter-base junction to the base side in write-voltage application, thereby lowering the dielectric strength of the part. Therefore, the emitter junction can be destroyed at a stage the collector-base junction is never destroyed and a short circuit between the emitter and collector which is formed by writing can be prevented.
JP11580378A 1978-09-22 1978-09-22 Junction destructive write type semiconductor memory unit Pending JPS5542365A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11580378A JPS5542365A (en) 1978-09-22 1978-09-22 Junction destructive write type semiconductor memory unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11580378A JPS5542365A (en) 1978-09-22 1978-09-22 Junction destructive write type semiconductor memory unit

Publications (1)

Publication Number Publication Date
JPS5542365A true JPS5542365A (en) 1980-03-25

Family

ID=14671462

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11580378A Pending JPS5542365A (en) 1978-09-22 1978-09-22 Junction destructive write type semiconductor memory unit

Country Status (1)

Country Link
JP (1) JPS5542365A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4507757A (en) * 1982-03-23 1985-03-26 Texas Instruments Incorporated Avalanche fuse element in programmable memory
US4507756A (en) * 1982-03-23 1985-03-26 Texas Instruments Incorporated Avalanche fuse element as programmable device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4507757A (en) * 1982-03-23 1985-03-26 Texas Instruments Incorporated Avalanche fuse element in programmable memory
US4507756A (en) * 1982-03-23 1985-03-26 Texas Instruments Incorporated Avalanche fuse element as programmable device

Similar Documents

Publication Publication Date Title
JPS53132275A (en) Semiconductor device and its production
JPS5758356A (en) Manufacture of semiconductor device
JPS5542365A (en) Junction destructive write type semiconductor memory unit
JPS57118669A (en) Multiemitter type npn transistor
FR2322461A1 (en) THIN FILM TRANSISTOR
JPS5713758A (en) Semiconductor device
JPS5627942A (en) Semiconductor device and its manufacturing method
JPS57206062A (en) Semiconductor integrated circuit
JPS56148863A (en) Manufacture of semiconductor device
JPS5496366A (en) Semiconductor device
JPS5493366A (en) Bipolar type transistor
JPS5630756A (en) Semiconductor device
JPS57206072A (en) Semiconductor device
JPS54126462A (en) Production of semiconductor device
JPS56112752A (en) Semiconductor device
JPS5291382A (en) Insulating gate type field effect transistor
JPS54156481A (en) Semiconductor device
JPS5575256A (en) Semiconductor device
JPS5571062A (en) Iil type semiconductor device
JPS551154A (en) Electrostatic induction transistor logical circuit device
JPS57140056A (en) Semiconductor storage device
JPS5769758A (en) Semiconductor device
JPS57147275A (en) Semiconductor device
JPS5536937A (en) Nonvolatile semiconductor storage unit
JPS5658258A (en) Semiconductor integrated circuit