JPS5548979A - Manufacturing method of solar cell - Google Patents

Manufacturing method of solar cell

Info

Publication number
JPS5548979A
JPS5548979A JP12220978A JP12220978A JPS5548979A JP S5548979 A JPS5548979 A JP S5548979A JP 12220978 A JP12220978 A JP 12220978A JP 12220978 A JP12220978 A JP 12220978A JP S5548979 A JPS5548979 A JP S5548979A
Authority
JP
Japan
Prior art keywords
layer
resistance
amorphous
low
solar cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12220978A
Other languages
Japanese (ja)
Inventor
Genshiro Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12220978A priority Critical patent/JPS5548979A/en
Publication of JPS5548979A publication Critical patent/JPS5548979A/en
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE: To prevent the generation of a series resistance from increasing, by forming an acid-resisting metallic pipe on the surface of the side, on which a amorphous Si layer of a low-resistance substrate electrode is formed, so that an oxide is formed on the interface between the base board electrode and the amorphous Si layer.
CONSTITUTION: Layers 8 of Cr and Al are piled on a glass plate 7, and a Pt and a low-resistance Si containing a high concentration of P are thermally attached. The Si layer may be of either amorphous or multi-crystal. At this time, by being heat-treated at a temperature between 400°C and 900°C, a uniform silicified platinum layer 9 and a residual Si layer 2a are formed. An n-type high-resistance amorphous Si 3, a schottky barrier metal 4, an electrtode 5 and reflection preventing film 6 are formed on the layer 2a by glow-discharge using SiH4. As the layer 9 is capable of preventing a reaction between a metallic layer, such as Al, etc. and the low- resistance Si layer 2a and stabilized against high temperature, a good ohmic contact can be maintained between the layer 2a and the layer 8, a low resistance of the layer 2a can be satisfactorily maintained, and series resistance of a solar cell can be lowered.
COPYRIGHT: (C)1980,JPO&Japio
JP12220978A 1978-10-03 1978-10-03 Manufacturing method of solar cell Pending JPS5548979A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12220978A JPS5548979A (en) 1978-10-03 1978-10-03 Manufacturing method of solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12220978A JPS5548979A (en) 1978-10-03 1978-10-03 Manufacturing method of solar cell

Publications (1)

Publication Number Publication Date
JPS5548979A true JPS5548979A (en) 1980-04-08

Family

ID=14830242

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12220978A Pending JPS5548979A (en) 1978-10-03 1978-10-03 Manufacturing method of solar cell

Country Status (1)

Country Link
JP (1) JPS5548979A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5721875A (en) * 1980-07-14 1982-02-04 Canon Inc Photosensor
DE3135007A1 (en) * 1981-09-04 1983-03-24 Licentia Gmbh Multi-layer contact for a semiconductor arrangement
DE3242831A1 (en) * 1982-11-19 1984-05-24 Siemens AG, 1000 Berlin und 8000 München AMORPHOUS SILICON SOLAR CELL AND METHOD FOR THEIR PRODUCTION

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5721875A (en) * 1980-07-14 1982-02-04 Canon Inc Photosensor
DE3135007A1 (en) * 1981-09-04 1983-03-24 Licentia Gmbh Multi-layer contact for a semiconductor arrangement
DE3242831A1 (en) * 1982-11-19 1984-05-24 Siemens AG, 1000 Berlin und 8000 München AMORPHOUS SILICON SOLAR CELL AND METHOD FOR THEIR PRODUCTION

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