JPS5550713A - Transistor amplifier of power synthesis type - Google Patents
Transistor amplifier of power synthesis typeInfo
- Publication number
- JPS5550713A JPS5550713A JP12262978A JP12262978A JPS5550713A JP S5550713 A JPS5550713 A JP S5550713A JP 12262978 A JP12262978 A JP 12262978A JP 12262978 A JP12262978 A JP 12262978A JP S5550713 A JPS5550713 A JP S5550713A
- Authority
- JP
- Japan
- Prior art keywords
- amplifier
- transistor
- waves
- transistors
- waveguide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/601—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators using FET's, e.g. GaAs FET's
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microwave Amplifiers (AREA)
Abstract
PURPOSE:To establish the amplifier excellent in isolation and small in size, by constituting amplifier in synthesis of a plurality of transistors with the waveguide circuit. CONSTITUTION:The electromagnetic waves from the input waveguide 1 pass through the thin waveguides 2 and 2a split, are amplified at the amplifier 4 and 4a, synthesized through the thin waveguides 3 and 3a and picked up from the output side waveguide 5. The amplifiers 4 and 4a consist of the ferrite plate 6, absorbing resistor 7, transistor 8 and magnet 9 to feed magnetic field to the ferrite plate 6 externally, and it has the construction that a type of field displacement type isolator mounts transistors in inside. Thus, the retrogressing waves produced by the reason of in uniformity of performance of the transitor 8 and being a cause for mutual interference, can be absorbed. Since the transistor 8 is placed at the maximum electric field position of forward waves and selected forward, the forward and reverse ratio of isolator can be increased.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12262978A JPS5550713A (en) | 1978-10-06 | 1978-10-06 | Transistor amplifier of power synthesis type |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12262978A JPS5550713A (en) | 1978-10-06 | 1978-10-06 | Transistor amplifier of power synthesis type |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5550713A true JPS5550713A (en) | 1980-04-12 |
| JPS5651642B2 JPS5651642B2 (en) | 1981-12-07 |
Family
ID=14840690
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12262978A Granted JPS5550713A (en) | 1978-10-06 | 1978-10-06 | Transistor amplifier of power synthesis type |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5550713A (en) |
-
1978
- 1978-10-06 JP JP12262978A patent/JPS5550713A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5651642B2 (en) | 1981-12-07 |
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