JPS5553451A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5553451A
JPS5553451A JP12716178A JP12716178A JPS5553451A JP S5553451 A JPS5553451 A JP S5553451A JP 12716178 A JP12716178 A JP 12716178A JP 12716178 A JP12716178 A JP 12716178A JP S5553451 A JPS5553451 A JP S5553451A
Authority
JP
Japan
Prior art keywords
layer
film
epi
sio2
resistance element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12716178A
Other languages
Japanese (ja)
Inventor
Toru Suganuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12716178A priority Critical patent/JPS5553451A/en
Publication of JPS5553451A publication Critical patent/JPS5553451A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/43—Resistors having PN junctions

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To form a part of resistance element in impurity diffusion layer of a determined density under a film of dielectric liquid film by forming such film. CONSTITUTION:A p<+>-layer 3 is disposed on Si n-epi-layer 1 and SiO2 2 and Si3N4 are stacked thereon to form an opening 8. By steam oxidation at temperature of about 1000 deg.C, a part of P<+>-layer 3' directly under SiO2 2' selectively grown is lowered in impurity potency in relative to other part. Accordingly, the layer 3' can be used as high resistance element. The film 4 is removed and windows 9, 9' are formed and Al electrodes 7, 7' are attached. By this method resitance element can be formed by one heat diffusion properly as controlling resistance value and as peak inverse voltage is determined between epi-layer 1 and p<+>-layer 3, it is high voltage.
JP12716178A 1978-10-16 1978-10-16 Semiconductor device Pending JPS5553451A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12716178A JPS5553451A (en) 1978-10-16 1978-10-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12716178A JPS5553451A (en) 1978-10-16 1978-10-16 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5553451A true JPS5553451A (en) 1980-04-18

Family

ID=14953142

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12716178A Pending JPS5553451A (en) 1978-10-16 1978-10-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5553451A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5851555A (en) * 1981-09-23 1983-03-26 Nippon Denso Co Ltd Semiconductor resistance unit
JPS62235766A (en) * 1986-04-07 1987-10-15 Matsushita Electronics Corp Manufacture of semiconductor device
JPH0566677A (en) * 1992-01-31 1993-03-19 Toshiba Corp Electrostatic latent image developing device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5112779A (en) * 1974-07-23 1976-01-31 Tokyo Shibaura Electric Co Handotaisochito sonoseizohoho

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5112779A (en) * 1974-07-23 1976-01-31 Tokyo Shibaura Electric Co Handotaisochito sonoseizohoho

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5851555A (en) * 1981-09-23 1983-03-26 Nippon Denso Co Ltd Semiconductor resistance unit
JPS62235766A (en) * 1986-04-07 1987-10-15 Matsushita Electronics Corp Manufacture of semiconductor device
JPH0566677A (en) * 1992-01-31 1993-03-19 Toshiba Corp Electrostatic latent image developing device

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