JPS57207343A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57207343A
JPS57207343A JP56092493A JP9249381A JPS57207343A JP S57207343 A JPS57207343 A JP S57207343A JP 56092493 A JP56092493 A JP 56092493A JP 9249381 A JP9249381 A JP 9249381A JP S57207343 A JPS57207343 A JP S57207343A
Authority
JP
Japan
Prior art keywords
film
layer
si3n4
oxidation
resisting layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56092493A
Other languages
Japanese (ja)
Inventor
Yoshihiro Ishizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56092493A priority Critical patent/JPS57207343A/en
Publication of JPS57207343A publication Critical patent/JPS57207343A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To reduce the fluctuation of the surface impurity density of an element region and contrive the yield improvement by heat treatment after forming a semiconductor element region later to form a protecting film for oxidation and water resistances on an oxide film covering the element. CONSTITUTION:After forming an insulation isolating layer 4, P<+> base 5 and P<+> resisting layer 6, an Si3N4 film 14 is interposed on an SiO2 film 9 on the resisting layer 6. Next, an N<+> emitter layer 7 is provided with electrodes 10- 14. The Si3N4 film 14 on the resisting layer 6 blocks oxidation at the interface between the N<+> layer 6 and SiO2 film 9 to prevent the inhomogeneity of resistance values. Not only an Si3N4, but a film for oxidation and water resistances may be used. Further, the Si3N4 film may be removed on a fixed process on a half way.
JP56092493A 1981-06-16 1981-06-16 Manufacture of semiconductor device Pending JPS57207343A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56092493A JPS57207343A (en) 1981-06-16 1981-06-16 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56092493A JPS57207343A (en) 1981-06-16 1981-06-16 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57207343A true JPS57207343A (en) 1982-12-20

Family

ID=14055817

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56092493A Pending JPS57207343A (en) 1981-06-16 1981-06-16 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57207343A (en)

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