JPS5553452A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5553452A
JPS5553452A JP12624978A JP12624978A JPS5553452A JP S5553452 A JPS5553452 A JP S5553452A JP 12624978 A JP12624978 A JP 12624978A JP 12624978 A JP12624978 A JP 12624978A JP S5553452 A JPS5553452 A JP S5553452A
Authority
JP
Japan
Prior art keywords
poly
resistance
terminals
disposed
sio2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12624978A
Other languages
Japanese (ja)
Inventor
Kosuke Okuyama
Tatsu Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12624978A priority Critical patent/JPS5553452A/en
Publication of JPS5553452A publication Critical patent/JPS5553452A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Non-Adjustable Resistors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To stabilize characteristics by coating a part between terminals of poly Si resistance element with metal through insulative film. CONSTITUTION:In regard to high resistance poly Si element 3 disposed on SiO2 film 2 on Si substrate 1, almost part between terminals of the element 3 is coated with Al 5 through layers-insulative film 4. Al wiring layer 6 is disposed on a pair of the terminal and Si3N4 is formed by plasma or SiO2 is formed by high frequency spattering as protective layer 7. Thus change of resistance value of poly Si resistance element can be controlled very efficiently.
JP12624978A 1978-10-16 1978-10-16 Semiconductor device Pending JPS5553452A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12624978A JPS5553452A (en) 1978-10-16 1978-10-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12624978A JPS5553452A (en) 1978-10-16 1978-10-16 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5553452A true JPS5553452A (en) 1980-04-18

Family

ID=14930488

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12624978A Pending JPS5553452A (en) 1978-10-16 1978-10-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5553452A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4455567A (en) * 1981-11-27 1984-06-19 Hughes Aircraft Company Polycrystalline semiconductor resistor having a noise reducing field plate
US4528582A (en) * 1983-09-21 1985-07-09 General Electric Company Interconnection structure for polycrystalline silicon resistor and methods of making same
JPH07153921A (en) * 1993-07-23 1995-06-16 Hyundai Electron Ind Co Ltd Semiconductor device and manufacturing method thereof
US5500553A (en) * 1992-08-12 1996-03-19 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having polysilicon resistors with a specific resistance ratio resistant to manufacturing processes

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5055281A (en) * 1973-09-12 1975-05-15
JPS5147371A (en) * 1974-10-21 1976-04-22 Fujitsu Ltd Handotaisochi

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5055281A (en) * 1973-09-12 1975-05-15
JPS5147371A (en) * 1974-10-21 1976-04-22 Fujitsu Ltd Handotaisochi

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4455567A (en) * 1981-11-27 1984-06-19 Hughes Aircraft Company Polycrystalline semiconductor resistor having a noise reducing field plate
US4528582A (en) * 1983-09-21 1985-07-09 General Electric Company Interconnection structure for polycrystalline silicon resistor and methods of making same
US5500553A (en) * 1992-08-12 1996-03-19 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having polysilicon resistors with a specific resistance ratio resistant to manufacturing processes
US5956592A (en) * 1992-08-12 1999-09-21 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device having polysilicon resistors with a specific resistance ratio resistant to manufacturing processes
JPH07153921A (en) * 1993-07-23 1995-06-16 Hyundai Electron Ind Co Ltd Semiconductor device and manufacturing method thereof

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