JPS5559774A - Semiconductor integrated circuit device and method of fabricating the same - Google Patents
Semiconductor integrated circuit device and method of fabricating the sameInfo
- Publication number
- JPS5559774A JPS5559774A JP13218978A JP13218978A JPS5559774A JP S5559774 A JPS5559774 A JP S5559774A JP 13218978 A JP13218978 A JP 13218978A JP 13218978 A JP13218978 A JP 13218978A JP S5559774 A JPS5559774 A JP S5559774A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- semiconductor integrated
- circuit device
- film
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To highly integrate a semiconductor integrated circuit device by positioning a connecting hole adjacent to a gate to thereby eliminate a margin thereat.
CONSTITUTION: A P-type diffused layer 12 and a silicon dioxide film 13 are sequentially formed on a P-type silicon substrate 11. Then, a gate oxide film 14 and a polycrystalline silicon 15 are sequentially formed on the other portion of the substrate 11. Subsequently, source and drain 19, 20 are formed on the substrate 11. After a silicon nitride film 21 is further formed on the film 16, aluminum wires 27, 28 are formed thereon to complete a semiconductor integrated circuit device. Since connecting holes are positioned adjacent to the gate, it can eliminate a margin thereat and adapt for its high integration. Since the silicon dioxide film and the silicon nitride film are formed in double between the polycrystalline silicon of gate electrode and the aluminum wires, no shortage occurs therebetween.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13218978A JPS5559774A (en) | 1978-10-27 | 1978-10-27 | Semiconductor integrated circuit device and method of fabricating the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13218978A JPS5559774A (en) | 1978-10-27 | 1978-10-27 | Semiconductor integrated circuit device and method of fabricating the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5559774A true JPS5559774A (en) | 1980-05-06 |
Family
ID=15075468
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13218978A Pending JPS5559774A (en) | 1978-10-27 | 1978-10-27 | Semiconductor integrated circuit device and method of fabricating the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5559774A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61226929A (en) * | 1985-03-29 | 1986-10-08 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Formation of semiconductor device |
-
1978
- 1978-10-27 JP JP13218978A patent/JPS5559774A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61226929A (en) * | 1985-03-29 | 1986-10-08 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Formation of semiconductor device |
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