JPS5563868A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS5563868A JPS5563868A JP13748678A JP13748678A JPS5563868A JP S5563868 A JPS5563868 A JP S5563868A JP 13748678 A JP13748678 A JP 13748678A JP 13748678 A JP13748678 A JP 13748678A JP S5563868 A JPS5563868 A JP S5563868A
- Authority
- JP
- Japan
- Prior art keywords
- region
- dielectric strength
- transistor
- high dielectric
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 abstract 2
- 230000003321 amplification Effects 0.000 abstract 1
- 230000000295 complement effect Effects 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
Landscapes
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To provide a high-speed output circuit of small area and high dielectric strength, by using an MOS transistor of high dielectric strength to drive a bipolar transistor whose base region is an insular semiconductor region provided in the semiconductor substrate of a complementary MOS integrated circuit.
CONSTITUTION: A p-type insulator region 2, which is to be the base of a bipolar transistor, and the drain region 10 of an MOS transistor of high dielectric strength are provided in an n-type semiconductor substrate 1. An n+-type emitter region 3, a P+-type source region 5 and a drain contact region 4 are then provided. A gate 6 is provided further. The base region 2 and the drain region 4 are then connected to each other. As a result, the output transistor acts as an emitter follower and a high current amplification factor is obtained. Therefore, a transistor of small area can be used and the switching speed can be raised. A high dielectric strength is obtained because the output transistor is driven by the MOS transistor of high dielectric strength.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13748678A JPS5563868A (en) | 1978-11-08 | 1978-11-08 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13748678A JPS5563868A (en) | 1978-11-08 | 1978-11-08 | Semiconductor integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5563868A true JPS5563868A (en) | 1980-05-14 |
Family
ID=15199756
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13748678A Pending JPS5563868A (en) | 1978-11-08 | 1978-11-08 | Semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5563868A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59182563A (en) * | 1983-03-31 | 1984-10-17 | Fujitsu Ltd | Semiconductor device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS441023Y1 (en) * | 1965-02-07 | 1969-01-16 | ||
| JPS4839175A (en) * | 1971-09-17 | 1973-06-08 | ||
| JPS5360582A (en) * | 1976-11-12 | 1978-05-31 | Hitachi Ltd | Semiconductor ingegrated circuit device |
-
1978
- 1978-11-08 JP JP13748678A patent/JPS5563868A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS441023Y1 (en) * | 1965-02-07 | 1969-01-16 | ||
| JPS4839175A (en) * | 1971-09-17 | 1973-06-08 | ||
| JPS5360582A (en) * | 1976-11-12 | 1978-05-31 | Hitachi Ltd | Semiconductor ingegrated circuit device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59182563A (en) * | 1983-03-31 | 1984-10-17 | Fujitsu Ltd | Semiconductor device |
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