JPS5565454A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5565454A
JPS5565454A JP13955778A JP13955778A JPS5565454A JP S5565454 A JPS5565454 A JP S5565454A JP 13955778 A JP13955778 A JP 13955778A JP 13955778 A JP13955778 A JP 13955778A JP S5565454 A JPS5565454 A JP S5565454A
Authority
JP
Japan
Prior art keywords
resistor
layer
diode
separator
insulated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13955778A
Other languages
Japanese (ja)
Other versions
JPS6260816B2 (en
Inventor
Kimimaro Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13955778A priority Critical patent/JPS5565454A/en
Publication of JPS5565454A publication Critical patent/JPS5565454A/en
Publication of JPS6260816B2 publication Critical patent/JPS6260816B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To increase strength against electrostatic breakdown without increasing the occupied area required for the separation and insulation of elements. CONSTITUTION:p-Type resistor layer to be provided for the n-layer of semiconductor substrate 4 is divided into layers 7a and 7b. Resistor 7a on the external terminal side is separated and insulated by n-layer 6, and it is connected in series with n-layer 5 including resistor 7b via thin film resistor 11. By this structure, parastic diode 8 from resistor 7b to the power source is produced; and diode 9 from resistor 7a to separator-insulator layer 6, and diode 10 from separator-insulator layer 6 to substrate 4 are connected in parallel to the electrostatic pulse discharge route. In this structure, since resistor 7a is separated and insulated, no discharge pulse enters power supply side wiring 3 from input terminal 1, so that it becomes sufficiently strong against electrostatic breakdown. Further, the area occupied by the layer which separates and insulates the small resistor connected to the external terminal can be made smaller compared with the conventional device.
JP13955778A 1978-11-13 1978-11-13 Semiconductor device Granted JPS5565454A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13955778A JPS5565454A (en) 1978-11-13 1978-11-13 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13955778A JPS5565454A (en) 1978-11-13 1978-11-13 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5565454A true JPS5565454A (en) 1980-05-16
JPS6260816B2 JPS6260816B2 (en) 1987-12-18

Family

ID=15248026

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13955778A Granted JPS5565454A (en) 1978-11-13 1978-11-13 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5565454A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57124464A (en) * 1981-01-26 1982-08-03 Mitsubishi Electric Corp Semiconductor integrated circuit device
US6653713B2 (en) * 2000-10-13 2003-11-25 Seiko Instruments Inc. Thin film resistor with stress compensation

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4913092U (en) * 1972-05-11 1974-02-04
JPS5754288U (en) * 1980-09-17 1982-03-30

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4913092U (en) * 1972-05-11 1974-02-04
JPS5754288U (en) * 1980-09-17 1982-03-30

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57124464A (en) * 1981-01-26 1982-08-03 Mitsubishi Electric Corp Semiconductor integrated circuit device
US6653713B2 (en) * 2000-10-13 2003-11-25 Seiko Instruments Inc. Thin film resistor with stress compensation

Also Published As

Publication number Publication date
JPS6260816B2 (en) 1987-12-18

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