JPS648643A - Fuse circuit - Google Patents
Fuse circuitInfo
- Publication number
- JPS648643A JPS648643A JP62164224A JP16422487A JPS648643A JP S648643 A JPS648643 A JP S648643A JP 62164224 A JP62164224 A JP 62164224A JP 16422487 A JP16422487 A JP 16422487A JP S648643 A JPS648643 A JP S648643A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- fuse
- substrate
- polycrystalline silicon
- covering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/931—Shapes of bond pads
- H10W72/932—Plan-view shape, i.e. in top view
Landscapes
- Design And Manufacture Of Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain a fuse circuit of semiconductor having a small size and high reliability by associating a diode of a semiconductor substrate and a fuse of a polycrystalline silicon layer. CONSTITUTION:A fuse circuit 1 is composed of a silicon oxide film 3 formed on a p-type semiconductor substrate 2, an n-type diffused layer D1 surrounded by the film 3, a polycrystalline silicon layer F covering part of the layer, a silicon oxide film 4 covering a whole surface, and aluminum wirings formed in its opening. Part of the layer F constructs each fuse fi. To melt a fuse f1 connected in parallel with a resistor r1, a potential in which the substrate 2 and the layer D1 become forward is applied between the substrate 2 and a pad P1, and a fuse melting current flows. A fuse circuit 1a has a groove 6 selectively formed on the film 3 formed to cover the substrate 2, a polycrystalline silicon layer Fa covering the whole surface and part of the film 3, an n-type diffused layer D1a formed in contact with the polycrystalline silicon layer in the bottom of the groove 6 on the substrate 2, a silicon oxide film 4a covering polycrystalline silicon layers Fa, Fb, and aluminum wirings 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62164224A JPS648643A (en) | 1987-06-30 | 1987-06-30 | Fuse circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62164224A JPS648643A (en) | 1987-06-30 | 1987-06-30 | Fuse circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS648643A true JPS648643A (en) | 1989-01-12 |
Family
ID=15789031
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62164224A Pending JPS648643A (en) | 1987-06-30 | 1987-06-30 | Fuse circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS648643A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004266165A (en) * | 2003-03-03 | 2004-09-24 | Sharp Corp | Nonvolatile storage element, nonvolatile storage circuit, nonvolatile storage card, and recording / reproducing device |
| JP2009010396A (en) * | 2008-07-22 | 2009-01-15 | Ricoh Co Ltd | Voltage setting circuit |
-
1987
- 1987-06-30 JP JP62164224A patent/JPS648643A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004266165A (en) * | 2003-03-03 | 2004-09-24 | Sharp Corp | Nonvolatile storage element, nonvolatile storage circuit, nonvolatile storage card, and recording / reproducing device |
| JP2009010396A (en) * | 2008-07-22 | 2009-01-15 | Ricoh Co Ltd | Voltage setting circuit |
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