JPS5565473A - Nonvolatile semiconductor memory device - Google Patents

Nonvolatile semiconductor memory device

Info

Publication number
JPS5565473A
JPS5565473A JP13969278A JP13969278A JPS5565473A JP S5565473 A JPS5565473 A JP S5565473A JP 13969278 A JP13969278 A JP 13969278A JP 13969278 A JP13969278 A JP 13969278A JP S5565473 A JPS5565473 A JP S5565473A
Authority
JP
Japan
Prior art keywords
film
interface
tungsten oxide
si3n4
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13969278A
Other languages
Japanese (ja)
Inventor
Noboru Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13969278A priority Critical patent/JPS5565473A/en
Publication of JPS5565473A publication Critical patent/JPS5565473A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To make write and erase feasible at low voltage and also to prolong memory retention period by forming tungsten oxide in molecularity on the interface of SiO2 film and Si3N4 film. CONSTITUTION:Tungsten oxide is chiefly WO2 or WO or a mixture thereof. These are distributed on the interface of SiO2 film 4 and Si3N4 film 5 at 8X10<14>-2X10<16> atoms/cm<3> or so. Tungsten oxide is strong in bonding strength with the films 4, 5, and from raising temperatures of an Si substrate 1 up to 780-820 deg.C at forming the Si3N4 film 5, a better crystallinity is obtainable for SiO2 film 4. A resistivity of the Si3N4 film is thus improved, a stored charge is prevented from leaking to the gate terminal side, thereby prolonging a memory retention period. Further the discharge injected from the substrate 1 is caught at a large unit of the interface of the films 4, 5 and thus prevented from being distributed in the film 5. Write or erase efficiency is therefore improved and a low-voltage high-speed operation is secured.
JP13969278A 1978-11-13 1978-11-13 Nonvolatile semiconductor memory device Pending JPS5565473A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13969278A JPS5565473A (en) 1978-11-13 1978-11-13 Nonvolatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13969278A JPS5565473A (en) 1978-11-13 1978-11-13 Nonvolatile semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS5565473A true JPS5565473A (en) 1980-05-16

Family

ID=15251189

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13969278A Pending JPS5565473A (en) 1978-11-13 1978-11-13 Nonvolatile semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5565473A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7053419B1 (en) * 2000-09-12 2006-05-30 Lumileds Lighting U.S., Llc Light emitting diodes with improved light extraction efficiency
US7064355B2 (en) 2000-09-12 2006-06-20 Lumileds Lighting U.S., Llc Light emitting diodes with improved light extraction efficiency
US7279345B2 (en) 2000-09-12 2007-10-09 Philips Lumileds Lighting Company, Llc Method of forming light emitting devices with improved light extraction efficiency

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4733579A (en) * 1971-03-26 1972-11-18
JPS4847280A (en) * 1971-10-15 1973-07-05

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4733579A (en) * 1971-03-26 1972-11-18
JPS4847280A (en) * 1971-10-15 1973-07-05

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7053419B1 (en) * 2000-09-12 2006-05-30 Lumileds Lighting U.S., Llc Light emitting diodes with improved light extraction efficiency
US7064355B2 (en) 2000-09-12 2006-06-20 Lumileds Lighting U.S., Llc Light emitting diodes with improved light extraction efficiency
US7279345B2 (en) 2000-09-12 2007-10-09 Philips Lumileds Lighting Company, Llc Method of forming light emitting devices with improved light extraction efficiency
US10312422B2 (en) 2000-09-12 2019-06-04 Lumileds Llc Light emitting devices with optical elements and bonding layers

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