JPS5696870A - Structure of mnos memory cell - Google Patents
Structure of mnos memory cellInfo
- Publication number
- JPS5696870A JPS5696870A JP17302479A JP17302479A JPS5696870A JP S5696870 A JPS5696870 A JP S5696870A JP 17302479 A JP17302479 A JP 17302479A JP 17302479 A JP17302479 A JP 17302479A JP S5696870 A JPS5696870 A JP S5696870A
- Authority
- JP
- Japan
- Prior art keywords
- film
- si3n4
- thin
- charge
- lowered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
Landscapes
- Non-Volatile Memory (AREA)
Abstract
PURPOSE:To increase the reading number in the MNOS memory cell by using an SiO2 layer and an Si3N4 layer films, maintaining the thickness of the Si3N4 film less than 500Angstrom , thereby enabling reading of a voltage of 1.5V and improving the ''0'' state holding characteristics thereof. CONSTITUTION:The second layer insulating film Si3N4 3 relates to the amplitude of the wiring voltage and the depth of a trap level. When the thin 3 becomes thin in case that the SiO2 film 2 is uniformly thick, the writing voltage is lowered, but the widths of the ''1'' and ''0'' are reduced, the depth of the grap is reduced, and the collected charge can be readily erased. The thickness of the Si3N4 film is set less than 500Angstrom , the threshold value is lowered in production by utilizing the effect by the thin film, and the charge disposed at the stable trap level in production is used without using the state that the charge is injected to the trap. Since the injection charge is not erased from the shallow trap level in this manner, the memory holding capacity can be remarkably improved, and since the thin Si3N4 film is used, the wiring voltage can be lowered, and it can be readily read even for 1.5V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17302479A JPS5696870A (en) | 1979-12-28 | 1979-12-28 | Structure of mnos memory cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17302479A JPS5696870A (en) | 1979-12-28 | 1979-12-28 | Structure of mnos memory cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5696870A true JPS5696870A (en) | 1981-08-05 |
Family
ID=15952787
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17302479A Pending JPS5696870A (en) | 1979-12-28 | 1979-12-28 | Structure of mnos memory cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5696870A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10782151B2 (en) | 2016-07-19 | 2020-09-22 | Lg Innotek Co., Ltd. | Sensor device |
| US10781821B2 (en) | 2016-07-19 | 2020-09-22 | Lg Innotek Co., Ltd. | Fan motor and vehicle comprising same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4852383A (en) * | 1971-11-01 | 1973-07-23 |
-
1979
- 1979-12-28 JP JP17302479A patent/JPS5696870A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4852383A (en) * | 1971-11-01 | 1973-07-23 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10782151B2 (en) | 2016-07-19 | 2020-09-22 | Lg Innotek Co., Ltd. | Sensor device |
| US10781821B2 (en) | 2016-07-19 | 2020-09-22 | Lg Innotek Co., Ltd. | Fan motor and vehicle comprising same |
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