JPS5567134A - Method for manufacturing electrode of semiconductor device - Google Patents
Method for manufacturing electrode of semiconductor deviceInfo
- Publication number
- JPS5567134A JPS5567134A JP14080278A JP14080278A JPS5567134A JP S5567134 A JPS5567134 A JP S5567134A JP 14080278 A JP14080278 A JP 14080278A JP 14080278 A JP14080278 A JP 14080278A JP S5567134 A JPS5567134 A JP S5567134A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sio
- mask
- thin
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- 238000005530 etching Methods 0.000 abstract 3
- 229920002120 photoresistant polymer Polymers 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 238000010030 laminating Methods 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To manufacture an electrode without exerting an influence upon a semiconductor device, by laminating an SiO2 film and a thin Al film on a semiconductor substrate which has an element region, firstly etching the thin Al film with a mask of a photoresist film which has an electrode hole, and secondly etching the SiO2 film with a mask of the thin Al film.
CONSTITUTION: An SiO2 film and a thin Al film 14 are coated on a semiconductor substrate 11 which has a pn-type region 12. The film 14 is covered with a photoresist film 15 provided with an electrode hole 16 facing the region 12. The photoresist film 15 is used as a mask to etch the film 14 exposed to the electrode hole 16 to open another hole 16 through the film 14 as well. The film 15 is removed. The film 14 having the hole 16 is used as a mask to perform etching to open still another hole 16 through the film 13 and expose the region 12. Al electrodes 17 are attached to a p-type and an n-type regions provided in the area 12. The SiO2 film 13 is coated on the area 12 between the regions.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14080278A JPS5567134A (en) | 1978-11-14 | 1978-11-14 | Method for manufacturing electrode of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14080278A JPS5567134A (en) | 1978-11-14 | 1978-11-14 | Method for manufacturing electrode of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5567134A true JPS5567134A (en) | 1980-05-21 |
Family
ID=15277070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14080278A Pending JPS5567134A (en) | 1978-11-14 | 1978-11-14 | Method for manufacturing electrode of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5567134A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4839338A (en) * | 1971-09-27 | 1973-06-09 |
-
1978
- 1978-11-14 JP JP14080278A patent/JPS5567134A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4839338A (en) * | 1971-09-27 | 1973-06-09 |
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