JPS52119084A - Manufacture of semiconductor integrated circuit - Google Patents

Manufacture of semiconductor integrated circuit

Info

Publication number
JPS52119084A
JPS52119084A JP3453376A JP3453376A JPS52119084A JP S52119084 A JPS52119084 A JP S52119084A JP 3453376 A JP3453376 A JP 3453376A JP 3453376 A JP3453376 A JP 3453376A JP S52119084 A JPS52119084 A JP S52119084A
Authority
JP
Japan
Prior art keywords
manufacture
integrated circuit
semiconductor integrated
single crystal
imlanting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3453376A
Other languages
Japanese (ja)
Other versions
JPS5840337B2 (en
Inventor
Shinji Okuhara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3453376A priority Critical patent/JPS5840337B2/en
Publication of JPS52119084A publication Critical patent/JPS52119084A/en
Publication of JPS5840337B2 publication Critical patent/JPS5840337B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)

Abstract

PURPOSE: To form a single crystal domain separated by a dielectric making a groove on a single crystal wafer and by imlanting ion and etching from backside after covering with a epi-layer.
COPYRIGHT: (C)1977,JPO&Japio
JP3453376A 1976-03-31 1976-03-31 Manufacturing method of semiconductor integrated circuit Expired JPS5840337B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3453376A JPS5840337B2 (en) 1976-03-31 1976-03-31 Manufacturing method of semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3453376A JPS5840337B2 (en) 1976-03-31 1976-03-31 Manufacturing method of semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS52119084A true JPS52119084A (en) 1977-10-06
JPS5840337B2 JPS5840337B2 (en) 1983-09-05

Family

ID=12416902

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3453376A Expired JPS5840337B2 (en) 1976-03-31 1976-03-31 Manufacturing method of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5840337B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5621341A (en) * 1979-07-28 1981-02-27 Oki Electric Ind Co Ltd Manufacture of dielectric insulating separation substrate
JPS57112045A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Manufacture of semiconductor device
JP2005122734A (en) * 2003-10-10 2005-05-12 Rosemount Inc Compact process transmitter with improved lead wire connection

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5621341A (en) * 1979-07-28 1981-02-27 Oki Electric Ind Co Ltd Manufacture of dielectric insulating separation substrate
JPS57112045A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Manufacture of semiconductor device
JP2005122734A (en) * 2003-10-10 2005-05-12 Rosemount Inc Compact process transmitter with improved lead wire connection

Also Published As

Publication number Publication date
JPS5840337B2 (en) 1983-09-05

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