JPS556821A - Photo detecting apparatus - Google Patents

Photo detecting apparatus

Info

Publication number
JPS556821A
JPS556821A JP7854178A JP7854178A JPS556821A JP S556821 A JPS556821 A JP S556821A JP 7854178 A JP7854178 A JP 7854178A JP 7854178 A JP7854178 A JP 7854178A JP S556821 A JPS556821 A JP S556821A
Authority
JP
Japan
Prior art keywords
silicone
photogate
film
oxide film
polycrystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7854178A
Other languages
Japanese (ja)
Inventor
Akinori Takakura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP7854178A priority Critical patent/JPS556821A/en
Publication of JPS556821A publication Critical patent/JPS556821A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To increase the sensitivity in the short wave length while making the spectral sensitivity even by making the photogate thinner in a photo detecting device with a polycrystal silicone as an electrode. CONSTITUTION:A silicone oxide film 2 is formed on a smiconductor substrate 1 and provided thereon with a photogate 4 made of a polycrystal silicone and made conductive with the dope of phosphorus, a CCD electrode (charge bonding element) 5, and a photo transfer gate 6. Additionally provided are a polycrystal silicone oxide film 7 for electrically insulating respective electrodes, an CVD oxide film or a PSG film 8 and a light shielding film 9 with a light receiving window. Particularly in the formation of the polycrystal silicone film, the portion of the photogate is made thin to about 1,000Angstrom . With such an arrangement, the light absorption is minimized in the zone of short wave length while multiple reflection is hard to occur thereby uniformizing the spectral sensitivity characteristics.
JP7854178A 1978-06-30 1978-06-30 Photo detecting apparatus Pending JPS556821A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7854178A JPS556821A (en) 1978-06-30 1978-06-30 Photo detecting apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7854178A JPS556821A (en) 1978-06-30 1978-06-30 Photo detecting apparatus

Publications (1)

Publication Number Publication Date
JPS556821A true JPS556821A (en) 1980-01-18

Family

ID=13664762

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7854178A Pending JPS556821A (en) 1978-06-30 1978-06-30 Photo detecting apparatus

Country Status (1)

Country Link
JP (1) JPS556821A (en)

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