JPS577976A - Photo electromotive force element - Google Patents
Photo electromotive force elementInfo
- Publication number
- JPS577976A JPS577976A JP8263480A JP8263480A JPS577976A JP S577976 A JPS577976 A JP S577976A JP 8263480 A JP8263480 A JP 8263480A JP 8263480 A JP8263480 A JP 8263480A JP S577976 A JPS577976 A JP S577976A
- Authority
- JP
- Japan
- Prior art keywords
- silicon layer
- type silicon
- fingers
- electrode
- amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/148—Shapes of potential barriers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
Landscapes
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To lead out the carrier generated on the surface of a P-N junction with the least resistance loss by a method wherein a pair of electrodes are formed into a comb shape and then they are formed into the structure in which the fingers of one of electrodes are inserted in between the fingers of the other electrode. CONSTITUTION:An amorphous P type silicon layer 32 is formed on one side of the surface of an insulated substrate 31 using a high frequency sputtering method. An amorphous I type silicon layer 33 is formed on all the sections of a P type silicon layer 32 other than the the electrode formed section which is remained as it is. An amorphous N type silicon layer 34 is formed on the I type silicon layer 33. A positive electrode 35 and a negative electrode 36 are formed on the P type silicon layer 32 and the N type silicon layer 34 respectively. These two electroes 35 and 36 are arranged in such manner that the fingers of one of electrodes are inserted in between the fingers of other electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8263480A JPS577976A (en) | 1980-06-17 | 1980-06-17 | Photo electromotive force element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8263480A JPS577976A (en) | 1980-06-17 | 1980-06-17 | Photo electromotive force element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS577976A true JPS577976A (en) | 1982-01-16 |
Family
ID=13779859
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8263480A Pending JPS577976A (en) | 1980-06-17 | 1980-06-17 | Photo electromotive force element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS577976A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59213175A (en) * | 1983-05-18 | 1984-12-03 | Fuji Electric Corp Res & Dev Ltd | Semiconductor photovoltaic device |
| US4733285A (en) * | 1984-07-24 | 1988-03-22 | Nec Corporation | Semiconductor device with input and/or output protective circuit |
| JP2010521811A (en) * | 2007-03-16 | 2010-06-24 | サンパワー コーポレイション | Solar cell contact finger and solder pad configuration to increase efficiency |
-
1980
- 1980-06-17 JP JP8263480A patent/JPS577976A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59213175A (en) * | 1983-05-18 | 1984-12-03 | Fuji Electric Corp Res & Dev Ltd | Semiconductor photovoltaic device |
| US4733285A (en) * | 1984-07-24 | 1988-03-22 | Nec Corporation | Semiconductor device with input and/or output protective circuit |
| JP2010521811A (en) * | 2007-03-16 | 2010-06-24 | サンパワー コーポレイション | Solar cell contact finger and solder pad configuration to increase efficiency |
| JP2013239725A (en) * | 2007-03-16 | 2013-11-28 | Sunpower Corp | Solar cell contact fingers and solder pad arrangement for enhanced efficiency |
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