JPS556830A - Semiconductor luminous apparatus - Google Patents

Semiconductor luminous apparatus

Info

Publication number
JPS556830A
JPS556830A JP7892978A JP7892978A JPS556830A JP S556830 A JPS556830 A JP S556830A JP 7892978 A JP7892978 A JP 7892978A JP 7892978 A JP7892978 A JP 7892978A JP S556830 A JPS556830 A JP S556830A
Authority
JP
Japan
Prior art keywords
metal film
substrate
layer
type
semiconductor luminous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7892978A
Other languages
Japanese (ja)
Inventor
Shigeo Osaka
Suketoshi Hiyamizu
Toshio Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7892978A priority Critical patent/JPS556830A/en
Publication of JPS556830A publication Critical patent/JPS556830A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To facilitate cleavage for better characteristics of a semiconductor luminous element by composing the ground for polycrystal portion of the element made up of a three-layer metal film of Ti, Pt and Ti.
CONSTITUTION: Ti, Pt and Ti are evaporated on a GaAs substrate 1 to form a metal film 2. Then, a part of the substrate is exposed by a patterning of the metal film 2. In addition, a n-type clad layer 3, a p-type activated 4, a p-type clad layer 5 and a p-type can layer 6 are allowed to grow on the substrate. Each crystal layer develops a monocrystal on the surface of the substrate 1 and a polycrystal on the metal film. Finally, an electrode metal is evaporated to form ohmic electrodes 7 and 8.
COPYRIGHT: (C)1980,JPO&Japio
JP7892978A 1978-06-29 1978-06-29 Semiconductor luminous apparatus Pending JPS556830A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7892978A JPS556830A (en) 1978-06-29 1978-06-29 Semiconductor luminous apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7892978A JPS556830A (en) 1978-06-29 1978-06-29 Semiconductor luminous apparatus

Publications (1)

Publication Number Publication Date
JPS556830A true JPS556830A (en) 1980-01-18

Family

ID=13675552

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7892978A Pending JPS556830A (en) 1978-06-29 1978-06-29 Semiconductor luminous apparatus

Country Status (1)

Country Link
JP (1) JPS556830A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57136385A (en) * 1981-02-16 1982-08-23 Sanyo Electric Co Ltd Manufacture of semiconductor laser
JPS5812387A (en) * 1981-07-15 1983-01-24 Sanyo Electric Co Ltd Semiconductor laser
JPS6031287A (en) * 1983-07-29 1985-02-18 Matsushita Electric Ind Co Ltd semiconductor laser equipment
JPS60213068A (en) * 1984-04-07 1985-10-25 Daido Steel Co Ltd Semiconductor light emitting device and its manufacturing method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57136385A (en) * 1981-02-16 1982-08-23 Sanyo Electric Co Ltd Manufacture of semiconductor laser
JPS5812387A (en) * 1981-07-15 1983-01-24 Sanyo Electric Co Ltd Semiconductor laser
JPS6031287A (en) * 1983-07-29 1985-02-18 Matsushita Electric Ind Co Ltd semiconductor laser equipment
JPS60213068A (en) * 1984-04-07 1985-10-25 Daido Steel Co Ltd Semiconductor light emitting device and its manufacturing method

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