JPS556863A - Semiconductor laser element and its preparation - Google Patents

Semiconductor laser element and its preparation

Info

Publication number
JPS556863A
JPS556863A JP7937278A JP7937278A JPS556863A JP S556863 A JPS556863 A JP S556863A JP 7937278 A JP7937278 A JP 7937278A JP 7937278 A JP7937278 A JP 7937278A JP S556863 A JPS556863 A JP S556863A
Authority
JP
Japan
Prior art keywords
region
semiconductor laser
laser element
dope
carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7937278A
Other languages
Japanese (ja)
Other versions
JPS5726437B2 (en
Inventor
Hiroshi Hayashi
Kazuhisa Murata
Takuo Takenaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP7937278A priority Critical patent/JPS556863A/en
Publication of JPS556863A publication Critical patent/JPS556863A/en
Publication of JPS5726437B2 publication Critical patent/JPS5726437B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To uniformalize characteristics, by stabilizing the composition ratio of growth region by using amphoteric impurities, such as, Si, etc. as the dopants of GaAlAs regions growing on a GaAs substrate regarding this GaAlAs system semiconductor laser element.
CONSTITUTION: A Si dope (The concentration of a carrier ∼1016cm-3)n-Ga0.4Al0.6As region as the first region 9, a Si dope (The concentration of a carrier ∼1017cm-3 )P-Ga0.3Al0.2As region as the second region 10, a Zn dope (The concentration of a carrier ∼1018cm-3)P-Ga0.4Al0.6As region as the third region 11 and a P+-GaAs region as the fourth region 12 are successively laminated on a GaAs substrate 8, thus forming this visible-ray semiconductor laser element.
COPYRIGHT: (C)1980,JPO&Japio
JP7937278A 1978-06-28 1978-06-28 Semiconductor laser element and its preparation Granted JPS556863A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7937278A JPS556863A (en) 1978-06-28 1978-06-28 Semiconductor laser element and its preparation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7937278A JPS556863A (en) 1978-06-28 1978-06-28 Semiconductor laser element and its preparation

Publications (2)

Publication Number Publication Date
JPS556863A true JPS556863A (en) 1980-01-18
JPS5726437B2 JPS5726437B2 (en) 1982-06-04

Family

ID=13688033

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7937278A Granted JPS556863A (en) 1978-06-28 1978-06-28 Semiconductor laser element and its preparation

Country Status (1)

Country Link
JP (1) JPS556863A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4876482A (en) * 1972-01-14 1973-10-15
JPS52115678A (en) * 1976-03-24 1977-09-28 Sharp Corp Double hetero type laser element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4876482A (en) * 1972-01-14 1973-10-15
JPS52115678A (en) * 1976-03-24 1977-09-28 Sharp Corp Double hetero type laser element

Also Published As

Publication number Publication date
JPS5726437B2 (en) 1982-06-04

Similar Documents

Publication Publication Date Title
JPS5710992A (en) Semiconductor device and manufacture therefor
JPS556863A (en) Semiconductor laser element and its preparation
JPS54152878A (en) Structure of semiconductor laser element and its manufacture
JPS5271172A (en) Growth of p type boron phosphide semiconductor
JPS5434767A (en) Formation method of n-type layer
JPS5353253A (en) Manufacture of semiconductor epitaxial growth layer
JPS52116072A (en) Process for doping nitrogen to gallium phosphide
JPS52152184A (en) Semiconductor device
JPS5664489A (en) Semiconductor laser element
JPS57184278A (en) Semiconductor laser element
JPS53973A (en) Semiconductor element
JPS5474686A (en) Visible semiconductor laser and its manufacture
JPS5437098A (en) Method of producing gallium phosphide greenish luminous element
JPS5377170A (en) Selective growth method of compound semiconductor
JPS52115678A (en) Double hetero type laser element
JPS5670676A (en) Luminous diode
JPS5580377A (en) Semiconductor luminous element
JPS5319777A (en) Semiconductor laser
JPS56120183A (en) Semiconductor laser element
JPS57123897A (en) Forming method of compound semiconductor crystal
JPS54152877A (en) Semiconductor laser element and its manufacture
JPS57155792A (en) Semiconductor laser
JPS5432182A (en) Epitaxial growing method in liquid phase
JPS544580A (en) Production of semiconductor devices
JPS6442815A (en) Compound semiconductor crystal growth method