JPS544580A - Production of semiconductor devices - Google Patents

Production of semiconductor devices

Info

Publication number
JPS544580A
JPS544580A JP7031577A JP7031577A JPS544580A JP S544580 A JPS544580 A JP S544580A JP 7031577 A JP7031577 A JP 7031577A JP 7031577 A JP7031577 A JP 7031577A JP S544580 A JPS544580 A JP S544580A
Authority
JP
Japan
Prior art keywords
production
semiconductor devices
combination
ion implantation
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7031577A
Other languages
Japanese (ja)
Inventor
Takeshi Konuma
Toshio Sugawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP7031577A priority Critical patent/JPS544580A/en
Publication of JPS544580A publication Critical patent/JPS544580A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To make the impurity concentrations of respective layers accurate and obtain FETs of good electrical characteristics with good reproducibility by forming an N- type layer which becomes a buffer layer by an ion implantation method. or the combination of an epitaxial method and ion implantaion method. within a semi-insulating GaAs substrate and an active layer by an epitaxial method or the combination of an epitaxial method and ion implantation method.
COPYRIGHT: (C)1979,JPO&Japio
JP7031577A 1977-06-13 1977-06-13 Production of semiconductor devices Pending JPS544580A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7031577A JPS544580A (en) 1977-06-13 1977-06-13 Production of semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7031577A JPS544580A (en) 1977-06-13 1977-06-13 Production of semiconductor devices

Publications (1)

Publication Number Publication Date
JPS544580A true JPS544580A (en) 1979-01-13

Family

ID=13427887

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7031577A Pending JPS544580A (en) 1977-06-13 1977-06-13 Production of semiconductor devices

Country Status (1)

Country Link
JP (1) JPS544580A (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4845173A (en) * 1971-10-11 1973-06-28
JPS5133979A (en) * 1974-09-18 1976-03-23 Nippon Electric Co
JPS5168184A (en) * 1974-12-10 1976-06-12 Sony Corp SHOTSUTOKISHOHEKIGATADENKAIKOKATORANJISUTANO SEIHO
JPS5180179A (en) * 1975-01-09 1976-07-13 Sanyo Electric Co KAGOBUTSUHANDOTAIOMOCHIITADENKAIKOKAGATATORANJISUTA
JPS5194774A (en) * 1975-02-19 1976-08-19
JPS51140474A (en) * 1975-05-30 1976-12-03 Hitachi Ltd Method of fabricating semiconductor crystal

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4845173A (en) * 1971-10-11 1973-06-28
JPS5133979A (en) * 1974-09-18 1976-03-23 Nippon Electric Co
JPS5168184A (en) * 1974-12-10 1976-06-12 Sony Corp SHOTSUTOKISHOHEKIGATADENKAIKOKATORANJISUTANO SEIHO
JPS5180179A (en) * 1975-01-09 1976-07-13 Sanyo Electric Co KAGOBUTSUHANDOTAIOMOCHIITADENKAIKOKAGATATORANJISUTA
JPS5194774A (en) * 1975-02-19 1976-08-19
JPS51140474A (en) * 1975-05-30 1976-12-03 Hitachi Ltd Method of fabricating semiconductor crystal

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