JPS5570060A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5570060A
JPS5570060A JP14444578A JP14444578A JPS5570060A JP S5570060 A JPS5570060 A JP S5570060A JP 14444578 A JP14444578 A JP 14444578A JP 14444578 A JP14444578 A JP 14444578A JP S5570060 A JPS5570060 A JP S5570060A
Authority
JP
Japan
Prior art keywords
aluminum
specific resistance
low specific
metal
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14444578A
Other languages
Japanese (ja)
Inventor
Yasuharu Nagayama
Kazuhiro Shimotori
Hideyuki Ozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14444578A priority Critical patent/JPS5570060A/en
Publication of JPS5570060A publication Critical patent/JPS5570060A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To shorten access time, by operating both a bit line and a word line at high speed wherein said both lines are constituted by metal with low specific resistance, such as, aluminum, etc. CONSTITUTION:The second layer insulating film 11 and metallic wiring 12 with low specific resistance, such as, aluminum, etc. are mounted. That is, wiring 10 used as a bit line is formed, the insulating film 11, such as, a silicon oxide film, etc. is again made up, contact holes are built up to insulating films 9, 11 and a word line consisting of metal 12 with low specific resistance, such as, aluminum, etc. is formed so as to contact with a gate electrode 7a.
JP14444578A 1978-11-20 1978-11-20 Semiconductor device Pending JPS5570060A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14444578A JPS5570060A (en) 1978-11-20 1978-11-20 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14444578A JPS5570060A (en) 1978-11-20 1978-11-20 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5570060A true JPS5570060A (en) 1980-05-27

Family

ID=15362381

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14444578A Pending JPS5570060A (en) 1978-11-20 1978-11-20 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5570060A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5835968A (en) * 1981-08-28 1983-03-02 Hitachi Ltd Semiconductor memory storage
JPS5871652A (en) * 1981-10-26 1983-04-28 Hitachi Ltd Semiconductor memory device
JPS594159A (en) * 1982-06-30 1984-01-10 Mitsubishi Electric Corp Semiconductor integrated circuit
JPS59155955A (en) * 1983-02-25 1984-09-05 Mitsubishi Electric Corp Semiconductor memory device
JPS59210662A (en) * 1983-05-16 1984-11-29 Nec Corp Read only memory
JPS604252A (en) * 1983-06-22 1985-01-10 Nec Corp Semiconductor integrated circuit memory device
JPS61138255U (en) * 1985-02-15 1986-08-27
JPS6387763A (en) * 1987-08-13 1988-04-19 Nec Corp Semiconductor integrated circuit memory
JPH02132856A (en) * 1989-04-12 1990-05-22 Hitachi Ltd Manufacturing method of semiconductor memory

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5835968A (en) * 1981-08-28 1983-03-02 Hitachi Ltd Semiconductor memory storage
JPS5871652A (en) * 1981-10-26 1983-04-28 Hitachi Ltd Semiconductor memory device
JPS594159A (en) * 1982-06-30 1984-01-10 Mitsubishi Electric Corp Semiconductor integrated circuit
JPS59155955A (en) * 1983-02-25 1984-09-05 Mitsubishi Electric Corp Semiconductor memory device
JPS59210662A (en) * 1983-05-16 1984-11-29 Nec Corp Read only memory
JPS604252A (en) * 1983-06-22 1985-01-10 Nec Corp Semiconductor integrated circuit memory device
JPS61138255U (en) * 1985-02-15 1986-08-27
JPS6387763A (en) * 1987-08-13 1988-04-19 Nec Corp Semiconductor integrated circuit memory
JPH02132856A (en) * 1989-04-12 1990-05-22 Hitachi Ltd Manufacturing method of semiconductor memory

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