JPS5577082A - Charge level detecting method of charge transfer type semiconductor device - Google Patents

Charge level detecting method of charge transfer type semiconductor device

Info

Publication number
JPS5577082A
JPS5577082A JP14944578A JP14944578A JPS5577082A JP S5577082 A JPS5577082 A JP S5577082A JP 14944578 A JP14944578 A JP 14944578A JP 14944578 A JP14944578 A JP 14944578A JP S5577082 A JPS5577082 A JP S5577082A
Authority
JP
Japan
Prior art keywords
charge
signal
decision
semiconductor device
amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14944578A
Other languages
Japanese (ja)
Other versions
JPS599118B2 (en
Inventor
Kazuyasu Fujishima
Michihiro Yamada
Tetsuo Tada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP53149445A priority Critical patent/JPS599118B2/en
Publication of JPS5577082A publication Critical patent/JPS5577082A/en
Publication of JPS599118B2 publication Critical patent/JPS599118B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/34—Digital stores in which the information is moved stepwise, e.g. shift registers using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C19/36—Digital stores in which the information is moved stepwise, e.g. shift registers using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using multistable semiconductor elements

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To make it possible to detect the level of CCD charge on a multi-level storage system (MLS), by making a decision on signal charge, read out by different reference charges stored in dummy cells, by comparing them by steps. CONSTITUTION:The levels of output charges of CCD shift register 3 change into Q, (2/3)Q, (1/3Q), 0, etc., according to the bit state of a signal of two bits, etc. Those charges are compared with reference charge (1/2)Q from 2nd dummy cell 6b applied to sense amplifier 4 through multiplexer 5 and amplifier 4 outputs decision signal ''1'' or ''0''. When this decision signal is ''1'', the reference charge applied to amplifier 4 by way of multiplexer 5 becomes (5/6)Q from 1st dummy cell 6a and a similar two-stage decision is made. When ''0'', on the other hand, the similar two-stage decision is made to detect a charge corresponding to the two-bit signal of the CCD charge on the MLS system, so that the memory will increase in density by the MLS system.
JP53149445A 1978-12-01 1978-12-01 Charge level detection method for charge transport type semiconductor device Expired JPS599118B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53149445A JPS599118B2 (en) 1978-12-01 1978-12-01 Charge level detection method for charge transport type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53149445A JPS599118B2 (en) 1978-12-01 1978-12-01 Charge level detection method for charge transport type semiconductor device

Publications (2)

Publication Number Publication Date
JPS5577082A true JPS5577082A (en) 1980-06-10
JPS599118B2 JPS599118B2 (en) 1984-02-29

Family

ID=15475265

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53149445A Expired JPS599118B2 (en) 1978-12-01 1978-12-01 Charge level detection method for charge transport type semiconductor device

Country Status (1)

Country Link
JP (1) JPS599118B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60136088A (en) * 1983-12-23 1985-07-19 Hitachi Ltd Semiconductor multilevel storage device
JPS6190392A (en) * 1984-10-08 1986-05-08 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory device
US6144585A (en) * 1993-12-28 2000-11-07 Nippon Steel Corporation Semiconductor storage device for storing three-or multi-valued data in one memory cell

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60136088A (en) * 1983-12-23 1985-07-19 Hitachi Ltd Semiconductor multilevel storage device
JPS6190392A (en) * 1984-10-08 1986-05-08 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory device
US6144585A (en) * 1993-12-28 2000-11-07 Nippon Steel Corporation Semiconductor storage device for storing three-or multi-valued data in one memory cell

Also Published As

Publication number Publication date
JPS599118B2 (en) 1984-02-29

Similar Documents

Publication Publication Date Title
DK243285D0 (en) MOENT DISCRIMINATION APPARATUS
EP0399258A3 (en) Semiconductor memory device having self-correcting function
SE7702938L (en) MEMORY NET
IE802516L (en) Semiconductor memory device
EP0347935A3 (en) Semiconductor memory device
US4300210A (en) Calibrated sensing system
EP0834883A3 (en) Semiconductor nonvolatile memory device
US4202046A (en) Data storage system for storing multilevel signals
US4196389A (en) Test site for a charged coupled device (CCD) array
US4185324A (en) Data storage system
JPS5641593A (en) Semiconductor memory unit
JPS56107387A (en) Semiconductor storage device
EP0158028A3 (en) Random access memory device
JPS5514588A (en) Semiconductor dynamic memory unit
EP0091819A3 (en) Charge-coupled device with data reference-level circuit
EP0068859A3 (en) Static-type semiconductor memory device
JPS5671886A (en) Associative memory device
JPS599118B2 (en) Charge level detection method for charge transport type semiconductor device
JPS5735434A (en) Adpcm reproducer
JPS5671884A (en) Nonvolatile semiconductor storage device
TW347536B (en) Semiconductor memory and method for reading data in the semiconductor memory
JPS5512538A (en) Detection method for stylus skip
JPS558622A (en) Semiconductor integrated circuit device
JPS56137593A (en) Multilevel rom
JPS57200990A (en) Semiconductor memory cell