JPS558002A - Semi-conductor base plate heating method - Google Patents

Semi-conductor base plate heating method

Info

Publication number
JPS558002A
JPS558002A JP7859678A JP7859678A JPS558002A JP S558002 A JPS558002 A JP S558002A JP 7859678 A JP7859678 A JP 7859678A JP 7859678 A JP7859678 A JP 7859678A JP S558002 A JPS558002 A JP S558002A
Authority
JP
Japan
Prior art keywords
semi
base plate
conductor
insulating
conductor base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7859678A
Other languages
Japanese (ja)
Inventor
Sukehisa Hiyamizu
Teruo Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7859678A priority Critical patent/JPS558002A/en
Publication of JPS558002A publication Critical patent/JPS558002A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE: To prevent a semi-insulating base plate from being contaminated by electrifying it in contact with an electroconductive semi-conductor.
CONSTITUTION: A semi-insulating semi-conductor base plate 1 and an electroconductive semi-conductor base plate 2 are put together and held by clamps 3a and 3b, and by electrifying between these clamps, the base plate 1 is heated by heat generation of the base plate 2. By holding sides of the base plates 1 and 2 with a clamp 4a, temperature of the base plate 1 is measured with an infrared thermometer to control electric current. It is possible, by employing this method, to prevent the semi-conductor base plate 2 from producing gaseous impurities by its heat generation so that it can be used repetitively. And it is also possible, if applied to the crystal growth method whereby a semi-conductor is heated in a vacuum condition, to raise temperature of the semi-insulating base plate to any temperature required with simplicity and in a clean condition.
COPYRIGHT: (C)1980,JPO&Japio
JP7859678A 1978-06-30 1978-06-30 Semi-conductor base plate heating method Pending JPS558002A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7859678A JPS558002A (en) 1978-06-30 1978-06-30 Semi-conductor base plate heating method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7859678A JPS558002A (en) 1978-06-30 1978-06-30 Semi-conductor base plate heating method

Publications (1)

Publication Number Publication Date
JPS558002A true JPS558002A (en) 1980-01-21

Family

ID=13666277

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7859678A Pending JPS558002A (en) 1978-06-30 1978-06-30 Semi-conductor base plate heating method

Country Status (1)

Country Link
JP (1) JPS558002A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5779674A (en) * 1980-09-09 1982-05-18 Energy Conversion Devices Inc Multiplex battery cell with amorphous photoresponsiveness
JP4681084B1 (en) * 2010-02-23 2011-05-11 株式会社テオス CVD processing method and CVD apparatus using the method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5779674A (en) * 1980-09-09 1982-05-18 Energy Conversion Devices Inc Multiplex battery cell with amorphous photoresponsiveness
JP4681084B1 (en) * 2010-02-23 2011-05-11 株式会社テオス CVD processing method and CVD apparatus using the method
WO2011104740A1 (en) * 2010-02-23 2011-09-01 株式会社テオス Cvd processing method and cvd device using said method

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