JPS558015A - Mos type semiconductor device manufacturing method - Google Patents

Mos type semiconductor device manufacturing method

Info

Publication number
JPS558015A
JPS558015A JP7945478A JP7945478A JPS558015A JP S558015 A JPS558015 A JP S558015A JP 7945478 A JP7945478 A JP 7945478A JP 7945478 A JP7945478 A JP 7945478A JP S558015 A JPS558015 A JP S558015A
Authority
JP
Japan
Prior art keywords
layer
layers
sio
film
grows
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7945478A
Other languages
Japanese (ja)
Inventor
Kazuyoshi Shinada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP7945478A priority Critical patent/JPS558015A/en
Publication of JPS558015A publication Critical patent/JPS558015A/en
Pending legal-status Critical Current

Links

Landscapes

  • Thin Film Transistor (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To enable a device to be operated at a high speed by reducing its size and highly accumulating it in such a manner as to enable a gate region to selfadjust toward source and drain layers with new and simple treatment.
CONSTITUTION: Layers of SiO2 2, Si3N4 3 and high concentration As added SiO2 4 are piled on a P- type Si base plate 1, and it is provided with a tapered hole. When a p-epi-layer is made, a single crystal Si 6 grows on the base plate 1 and a poly Si 7 also grows. And then, it is heat-treated for allowing As of the film 4 to be dispersed to form an N+ layer 7 and a layer 6 is also slightly dispersed. The layer 7 is etched to form layers 7a and 7b, and after the surface of Si layer 6 is turned into p+ type by injection of B, a gate oxide film 8 is prepared. At this time, SiO2 9 is formed on the layers 7a and 7b. By opening a window on the film 9, electrodes 10∼12 are selectively formed. It is possible, in this manner, to reduce size of the device remarkably, minimize joining capacity between a source layer and a drain layer while eliminating unnecessary joint between them, and therefore, to operate the device at a high speed.
COPYRIGHT: (C)1980,JPO&Japio
JP7945478A 1978-06-30 1978-06-30 Mos type semiconductor device manufacturing method Pending JPS558015A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7945478A JPS558015A (en) 1978-06-30 1978-06-30 Mos type semiconductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7945478A JPS558015A (en) 1978-06-30 1978-06-30 Mos type semiconductor device manufacturing method

Publications (1)

Publication Number Publication Date
JPS558015A true JPS558015A (en) 1980-01-21

Family

ID=13690316

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7945478A Pending JPS558015A (en) 1978-06-30 1978-06-30 Mos type semiconductor device manufacturing method

Country Status (1)

Country Link
JP (1) JPS558015A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128957A (en) * 1981-02-04 1982-08-10 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof
JPH01223769A (en) * 1988-03-03 1989-09-06 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and manufacture of the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128957A (en) * 1981-02-04 1982-08-10 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof
JPH01223769A (en) * 1988-03-03 1989-09-06 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and manufacture of the same

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