JPS5544732A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5544732A JPS5544732A JP11805178A JP11805178A JPS5544732A JP S5544732 A JPS5544732 A JP S5544732A JP 11805178 A JP11805178 A JP 11805178A JP 11805178 A JP11805178 A JP 11805178A JP S5544732 A JPS5544732 A JP S5544732A
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide film
- substrate
- alumina
- field oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 3
- 239000013078 crystal Substances 0.000 abstract 2
- 230000003647 oxidation Effects 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- 230000007547 defect Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE: To suppress the defects of crystals produced in a substrate, by beforehand forming an alumina film to a field oxide film, and by preventing the decrease of the thickness of the field oxide film by using the alumina film as an etching resisting mask.
CONSTITUTION: An Si oxide film 22 is made up on one surface of an Si substrate 21 by means of thermal oxidation, and a surface of a field oxide film 25 is converted into an alumina film by injection Al ions onto the surface of the oxide film 25. An oxidized Si film 27 functioning as a gate oxide film by means of the thermal oxidation and a polycrystal Si film 28 are successively laminating built up, the film 28 is patterned by means of plasma etching, the film 27 further formed under the film 28 is hole opened, impurities such as P are diffused into the substrate 21 from the hole, and a source 29 and drain 30 of a MOS transistor are made up while building up a gate electrode 31 by diffusing P to the film 27. Thus, the faults of crystals yielded in the substrate 21 can be controlled.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11805178A JPS5544732A (en) | 1978-09-27 | 1978-09-27 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11805178A JPS5544732A (en) | 1978-09-27 | 1978-09-27 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5544732A true JPS5544732A (en) | 1980-03-29 |
Family
ID=14726800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11805178A Pending JPS5544732A (en) | 1978-09-27 | 1978-09-27 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5544732A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6337195A (en) * | 1986-07-31 | 1988-02-17 | Jgc Corp | Method for fractional distillation of two-pressure type |
-
1978
- 1978-09-27 JP JP11805178A patent/JPS5544732A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6337195A (en) * | 1986-07-31 | 1988-02-17 | Jgc Corp | Method for fractional distillation of two-pressure type |
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