JPS558026A - Semi-conductor device manufacturing method - Google Patents

Semi-conductor device manufacturing method

Info

Publication number
JPS558026A
JPS558026A JP7989778A JP7989778A JPS558026A JP S558026 A JPS558026 A JP S558026A JP 7989778 A JP7989778 A JP 7989778A JP 7989778 A JP7989778 A JP 7989778A JP S558026 A JPS558026 A JP S558026A
Authority
JP
Japan
Prior art keywords
film
ion
poly
semi
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7989778A
Other languages
Japanese (ja)
Inventor
Takashi Osone
Takashi Hirao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP7989778A priority Critical patent/JPS558026A/en
Publication of JPS558026A publication Critical patent/JPS558026A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent a semi-conductor element from quality variation due to condition of formation by employing the ion injection method so that a poly Si film can be turned into a homogeneously amorphous body. CONSTITUTION:A poly Si 23 is formed on an SiO2 film 22 on a base plate 21, and inactive ion and homologous ion, such as Si, etc., or H ion are injected so that an entire body or surface of the film 23 is turned into a homogeneously amorphous layer 24. By employing this method, even if there were difference in crystal grain diameter on the basis of condition of formation of the poly Si 23, it can be converted into the amorphous film 24 formed by homogeneous micro-grain crystal, and therefore, an element to be made in this structure is to have a good reproducibility and stabilized characteristics.
JP7989778A 1978-06-30 1978-06-30 Semi-conductor device manufacturing method Pending JPS558026A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7989778A JPS558026A (en) 1978-06-30 1978-06-30 Semi-conductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7989778A JPS558026A (en) 1978-06-30 1978-06-30 Semi-conductor device manufacturing method

Publications (1)

Publication Number Publication Date
JPS558026A true JPS558026A (en) 1980-01-21

Family

ID=13703058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7989778A Pending JPS558026A (en) 1978-06-30 1978-06-30 Semi-conductor device manufacturing method

Country Status (1)

Country Link
JP (1) JPS558026A (en)

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57122575A (en) * 1981-01-23 1982-07-30 Hitachi Ltd Manufacture of thin film transistor
JPS58118154A (en) * 1982-01-07 1983-07-14 Seiko Epson Corp Semiconductor ic device
JPS58164268A (en) * 1982-03-25 1983-09-29 Seiko Epson Corp Thin film silicon transistor
JPS58164267A (en) * 1982-03-25 1983-09-29 Seiko Epson Corp Method for manufacturing thin film silicon transistors
JPS58182259A (en) * 1982-04-01 1983-10-25 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of forming polysilicon resistor
JPS5948952A (en) * 1982-09-14 1984-03-21 Sony Corp Manufacture of resistor
JPS59138374A (en) * 1983-01-28 1984-08-08 Canon Inc photo sensor
JPS60127755A (en) * 1983-12-15 1985-07-08 Sony Corp Manufacture of semiconductor device
JPS61119079A (en) * 1984-11-15 1986-06-06 Sony Corp Manufacture of thin film transistor
JPH0246756A (en) * 1988-08-08 1990-02-16 Mitsubishi Electric Corp Manufacture of semiconductor capacitor
JPH02290080A (en) * 1990-04-26 1990-11-29 Seiko Epson Corp Write-only semiconductor storage device
JPH03114029A (en) * 1990-06-25 1991-05-15 Seiko Epson Corp liquid crystal display device
JPH03114030A (en) * 1990-06-25 1991-05-15 Seiko Epson Corp Production of liquid crystal display device
WO1991010262A1 (en) * 1989-12-26 1991-07-11 Sony Corporation Method of manufacturing semiconductor device
JPH05203982A (en) * 1991-12-25 1993-08-13 Seiko Epson Corp Method of manufacturing thin film transistor
JPH06349856A (en) * 1993-03-18 1994-12-22 Gold Star Electron Co Ltd Thin film transistor and manufacturing method thereof
JPH07231095A (en) * 1994-02-01 1995-08-29 Lg Semicon Co Ltd Method of manufacturing thin film transistor
JPH0964374A (en) * 1995-08-24 1997-03-07 Lg Semicon Co Ltd Thin film transistor and manufacturing method thereof
WO2000024043A1 (en) * 1998-10-21 2000-04-27 IHP GMBH Innovations for High Performance Microelectronics Institut für innovative Mikroelektronik Integrated polycrystalline silicon resistance with carbon or germanium
US6352883B1 (en) 1991-02-22 2002-03-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6458200B1 (en) 1990-06-01 2002-10-01 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating thin-film transistor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4933224A (en) * 1972-07-28 1974-03-27
JPS4976486A (en) * 1972-11-13 1974-07-23
US3872492A (en) * 1972-07-26 1975-03-18 Energy Conversion Devices Inc Radiation hardened field effect transistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3872492A (en) * 1972-07-26 1975-03-18 Energy Conversion Devices Inc Radiation hardened field effect transistor
JPS4933224A (en) * 1972-07-28 1974-03-27
JPS4976486A (en) * 1972-11-13 1974-07-23

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57122575A (en) * 1981-01-23 1982-07-30 Hitachi Ltd Manufacture of thin film transistor
JPS58118154A (en) * 1982-01-07 1983-07-14 Seiko Epson Corp Semiconductor ic device
JPS58164268A (en) * 1982-03-25 1983-09-29 Seiko Epson Corp Thin film silicon transistor
JPS58164267A (en) * 1982-03-25 1983-09-29 Seiko Epson Corp Method for manufacturing thin film silicon transistors
JPS58182259A (en) * 1982-04-01 1983-10-25 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of forming polysilicon resistor
JPS5948952A (en) * 1982-09-14 1984-03-21 Sony Corp Manufacture of resistor
JPS59138374A (en) * 1983-01-28 1984-08-08 Canon Inc photo sensor
JPS60127755A (en) * 1983-12-15 1985-07-08 Sony Corp Manufacture of semiconductor device
JPS61119079A (en) * 1984-11-15 1986-06-06 Sony Corp Manufacture of thin film transistor
JPH0246756A (en) * 1988-08-08 1990-02-16 Mitsubishi Electric Corp Manufacture of semiconductor capacitor
WO1991010262A1 (en) * 1989-12-26 1991-07-11 Sony Corporation Method of manufacturing semiconductor device
US5356825A (en) * 1989-12-26 1994-10-18 Sony Corporation Method of manufacturing semiconductor devices
JPH02290080A (en) * 1990-04-26 1990-11-29 Seiko Epson Corp Write-only semiconductor storage device
US7018874B2 (en) 1990-06-01 2006-03-28 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating thin-film transistor
US6458200B1 (en) 1990-06-01 2002-10-01 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating thin-film transistor
US6740547B2 (en) 1990-06-01 2004-05-25 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating thin-film transistor
JPH03114030A (en) * 1990-06-25 1991-05-15 Seiko Epson Corp Production of liquid crystal display device
JPH03114029A (en) * 1990-06-25 1991-05-15 Seiko Epson Corp liquid crystal display device
US6352883B1 (en) 1991-02-22 2002-03-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6717180B2 (en) 1991-02-22 2004-04-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
JPH05203982A (en) * 1991-12-25 1993-08-13 Seiko Epson Corp Method of manufacturing thin film transistor
JPH06349856A (en) * 1993-03-18 1994-12-22 Gold Star Electron Co Ltd Thin film transistor and manufacturing method thereof
JPH07231095A (en) * 1994-02-01 1995-08-29 Lg Semicon Co Ltd Method of manufacturing thin film transistor
JPH0964374A (en) * 1995-08-24 1997-03-07 Lg Semicon Co Ltd Thin film transistor and manufacturing method thereof
WO2000024043A1 (en) * 1998-10-21 2000-04-27 IHP GMBH Innovations for High Performance Microelectronics Institut für innovative Mikroelektronik Integrated polycrystalline silicon resistance with carbon or germanium

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