JPS558035A - Semiconductor - Google Patents
SemiconductorInfo
- Publication number
- JPS558035A JPS558035A JP8011778A JP8011778A JPS558035A JP S558035 A JPS558035 A JP S558035A JP 8011778 A JP8011778 A JP 8011778A JP 8011778 A JP8011778 A JP 8011778A JP S558035 A JPS558035 A JP S558035A
- Authority
- JP
- Japan
- Prior art keywords
- range
- semiconductor
- electrode
- metallic
- metallic electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 8
- 239000004020 conductor Substances 0.000 abstract 4
- 230000003247 decreasing effect Effects 0.000 abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 2
- 230000000694 effects Effects 0.000 abstract 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: For decreasing electrolytic effect even when water has attached to semiconductor chip, to separate from the other electrodes the wire for interconnecting chip surface electrode and drawn-out lead wire by covering the metallic surface of the effective section in said semiconductor chip.
CONSTITUTION: A second conductor type semiconductor 2 is formed on a first conductor type semiconductor 1, a first or second conductor tupe range 3 of a high- concentration layer as operating section on said semiconductor 2, and a metallic electrode 7 on said range 3 with an insulating coat 6 provided therebetween. Further, a first or second conductor type range 4 is formed as operating section on said semiconductor 2, one end of said range 4 is connected with said range 2 by means of said metallic electrode 7, and the surface of said metallic electrode 7 is provided with inorganic insulating cover 11. Moreover, a drawn-out metallic electrode 8 is formed at the other end of said range 4, and a metallic wire 9 connected to said semiconductor chip is connected to the upper surface of said electrode 8 and set apart from the metallic electrode 7 on the other operating section. Thereby, the probability of water attachment to intensified field can be decreased.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8011778A JPS558035A (en) | 1978-06-30 | 1978-06-30 | Semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8011778A JPS558035A (en) | 1978-06-30 | 1978-06-30 | Semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS558035A true JPS558035A (en) | 1980-01-21 |
| JPS6128217B2 JPS6128217B2 (en) | 1986-06-28 |
Family
ID=13709242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8011778A Granted JPS558035A (en) | 1978-06-30 | 1978-06-30 | Semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS558035A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57204152A (en) * | 1981-06-10 | 1982-12-14 | Fujitsu Ltd | Semiconductor device |
-
1978
- 1978-06-30 JP JP8011778A patent/JPS558035A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57204152A (en) * | 1981-06-10 | 1982-12-14 | Fujitsu Ltd | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6128217B2 (en) | 1986-06-28 |
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