JPS558087A - Semiconductor device with input protection device - Google Patents

Semiconductor device with input protection device

Info

Publication number
JPS558087A
JPS558087A JP8131778A JP8131778A JPS558087A JP S558087 A JPS558087 A JP S558087A JP 8131778 A JP8131778 A JP 8131778A JP 8131778 A JP8131778 A JP 8131778A JP S558087 A JPS558087 A JP S558087A
Authority
JP
Japan
Prior art keywords
gate
drain
resistor
area
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8131778A
Other languages
Japanese (ja)
Inventor
Takeshi Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8131778A priority Critical patent/JPS558087A/en
Publication of JPS558087A publication Critical patent/JPS558087A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/686—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection using hot carriers produced by avalanche breakdown of PN junctions, e.g. floating gate avalanche injection MOS [FAMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To make its oun area small and imput pretective device destruction-proof by using FAMOS type non-volatile semiconductor to a protective circuit. CONSTITUTION:A gate oxization film 5 is formed on the surface of n tupe S; plate 1 and n<+> highly thick layer 4 is formed in a channel on which a gate 6 is established and P type source area 2 and a drain area 3 are formed with a result of FAMOS type non-volatile memory Q 4. This drain electrode is connected to an input terminal through a resistor R1 and the joint V4 between the drain and the resistor R1 is connected to the input transistor Tr Q5 gate. Hight voltage added to the drain causes an avalanche between areas 2 and 4 and produces electrons which are trapped in a gate 6 and maintained. Thereby with the input protective TrQ4 beyond the specified voltage Q4 turns on and electrons are trapped again and on resistance of on-resistance of Q4 becomes smaller quickly. Therefore, TrQ5 is protected.
JP8131778A 1978-07-03 1978-07-03 Semiconductor device with input protection device Pending JPS558087A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8131778A JPS558087A (en) 1978-07-03 1978-07-03 Semiconductor device with input protection device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8131778A JPS558087A (en) 1978-07-03 1978-07-03 Semiconductor device with input protection device

Publications (1)

Publication Number Publication Date
JPS558087A true JPS558087A (en) 1980-01-21

Family

ID=13743013

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8131778A Pending JPS558087A (en) 1978-07-03 1978-07-03 Semiconductor device with input protection device

Country Status (1)

Country Link
JP (1) JPS558087A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57180169A (en) * 1981-04-30 1982-11-06 Nec Corp Insulating gate type protective device
US4468257A (en) * 1981-06-19 1984-08-28 Mitsui Toatsu Chemicals, Incorporated Washing and removal method of high molecular substances
JPS6146046A (en) * 1984-08-10 1986-03-06 Hitachi Ltd Semiconductor integrated circuit device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57180169A (en) * 1981-04-30 1982-11-06 Nec Corp Insulating gate type protective device
US4468257A (en) * 1981-06-19 1984-08-28 Mitsui Toatsu Chemicals, Incorporated Washing and removal method of high molecular substances
JPS6146046A (en) * 1984-08-10 1986-03-06 Hitachi Ltd Semiconductor integrated circuit device

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