JPS551127A - Semiconductor device with field-effect transistor - Google Patents

Semiconductor device with field-effect transistor

Info

Publication number
JPS551127A
JPS551127A JP7376278A JP7376278A JPS551127A JP S551127 A JPS551127 A JP S551127A JP 7376278 A JP7376278 A JP 7376278A JP 7376278 A JP7376278 A JP 7376278A JP S551127 A JPS551127 A JP S551127A
Authority
JP
Japan
Prior art keywords
voltage
electrodes
layer
width
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7376278A
Other languages
Japanese (ja)
Inventor
Kunimitsu Fujiki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP7376278A priority Critical patent/JPS551127A/en
Publication of JPS551127A publication Critical patent/JPS551127A/en
Pending legal-status Critical Current

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  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To reduce the area occupied by a semiconductor device and attain a desired operation, by providing an MOS FET and a resistor in an identical region and setting the volgate or width of the gate at a selected value.
CONSTITUTION: Plural n+-layers 11, 12 are provided in an p-layer 10 of an n- type substrate 9. Aluminium films 17, 18 are produced through openings 15, 16 of an oxide film 13. An electrode 22 is provided on a gate oxide film 21 to prescribe a channel of L in length and W in width. Aluminium electrodes 31, 32 for the resistor are led from the layer 10 through connecting regions 25, 26 which sandwich the channel in the direction of its width. A voltage VSX is applied to the substrate 9. Voltages VSBO, VSB1 are applied to the electrodes 31, 32. When the voltage VSX is higher than the voltage VSBO and the voltage VSBO is higher than the voltage VSB1, the layer 10 serves as the resistor. When a voltage VD higher than the voltage VSB1 is applied to electrodes 22, 17, 18, the layer 10 serves as the MOS FET. The threshold value of the FET varies depending on the voltage applied to the electrodes 31, 32. Therefore, the desired operation is attained by setting the gate voltage, gate width or the like at a selected value.
COPYRIGHT: (C)1980,JPO&Japio
JP7376278A 1978-06-20 1978-06-20 Semiconductor device with field-effect transistor Pending JPS551127A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7376278A JPS551127A (en) 1978-06-20 1978-06-20 Semiconductor device with field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7376278A JPS551127A (en) 1978-06-20 1978-06-20 Semiconductor device with field-effect transistor

Publications (1)

Publication Number Publication Date
JPS551127A true JPS551127A (en) 1980-01-07

Family

ID=13527550

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7376278A Pending JPS551127A (en) 1978-06-20 1978-06-20 Semiconductor device with field-effect transistor

Country Status (1)

Country Link
JP (1) JPS551127A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000039857A1 (en) * 1998-12-23 2000-07-06 Honeywell Inc. Integrated circuit impedance device and method of manufacture therefor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000039857A1 (en) * 1998-12-23 2000-07-06 Honeywell Inc. Integrated circuit impedance device and method of manufacture therefor
US6180984B1 (en) 1998-12-23 2001-01-30 Honeywell Inc. Integrated circuit impedance device and method of manufacture therefor

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