JPS5585077A - Semi-conductor apparatus - Google Patents

Semi-conductor apparatus

Info

Publication number
JPS5585077A
JPS5585077A JP15897878A JP15897878A JPS5585077A JP S5585077 A JPS5585077 A JP S5585077A JP 15897878 A JP15897878 A JP 15897878A JP 15897878 A JP15897878 A JP 15897878A JP S5585077 A JPS5585077 A JP S5585077A
Authority
JP
Japan
Prior art keywords
type area
zener voltage
semi
area
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15897878A
Other languages
Japanese (ja)
Inventor
Setsuo Hiraoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Home Electronics Ltd
NEC Corp
Original Assignee
NEC Home Electronics Ltd
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Home Electronics Ltd, Nippon Electric Co Ltd filed Critical NEC Home Electronics Ltd
Priority to JP15897878A priority Critical patent/JPS5585077A/en
Publication of JPS5585077A publication Critical patent/JPS5585077A/en
Pending legal-status Critical Current

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  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To obtain a stabilized low Zener voltage by forming n--type area on n+-type area, forming p+-type area inside n+-type area through n--type area and further providing p--type area.
CONSTITUTION: n--Type area 11 is formed on n+-type area 10 and p+-type area 12 is formed inside n+-type area 10 through n--type area 11. Also p--type area 13 is formed including a surface sealing part between p+-type area 12 and n--type area 11. Due to p+-n--junction is formed between p+-type area 12 and n+-type area 10, pn-junction has low Zener voltage. In addition, on account of inverse layer not being formed on the surface of p--type area 13, the reproducibility of stabilized Zener voltage is satisfactory.
COPYRIGHT: (C)1980,JPO&Japio
JP15897878A 1978-12-21 1978-12-21 Semi-conductor apparatus Pending JPS5585077A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15897878A JPS5585077A (en) 1978-12-21 1978-12-21 Semi-conductor apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15897878A JPS5585077A (en) 1978-12-21 1978-12-21 Semi-conductor apparatus

Publications (1)

Publication Number Publication Date
JPS5585077A true JPS5585077A (en) 1980-06-26

Family

ID=15683526

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15897878A Pending JPS5585077A (en) 1978-12-21 1978-12-21 Semi-conductor apparatus

Country Status (1)

Country Link
JP (1) JPS5585077A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4742377A (en) * 1985-02-21 1988-05-03 General Instrument Corporation Schottky barrier device with doped composite guard ring
US4833509A (en) * 1983-10-31 1989-05-23 Burr-Brown Corporation Integrated circuit reference diode and fabrication method therefor
US4961099A (en) * 1988-02-12 1990-10-02 Asea Brown Boveri Ltd. High-power GTO thyristor and also a method for its manufacture
US5093693A (en) * 1987-10-15 1992-03-03 Bbc Brown Boveri Ag Pn-junction with guard ring
US5338966A (en) * 1989-09-21 1994-08-16 Toko Kabushiki Kaisha Variable capacitance diode device
JP2007059800A (en) * 2005-08-26 2007-03-08 Fuji Electric Device Technology Co Ltd Manufacturing method of vertical Zener diode and vertical Zener diode
JP2014179650A (en) * 2014-05-30 2014-09-25 Toshiba Corp Diode

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4833509A (en) * 1983-10-31 1989-05-23 Burr-Brown Corporation Integrated circuit reference diode and fabrication method therefor
US4742377A (en) * 1985-02-21 1988-05-03 General Instrument Corporation Schottky barrier device with doped composite guard ring
US5093693A (en) * 1987-10-15 1992-03-03 Bbc Brown Boveri Ag Pn-junction with guard ring
US4961099A (en) * 1988-02-12 1990-10-02 Asea Brown Boveri Ltd. High-power GTO thyristor and also a method for its manufacture
US5338966A (en) * 1989-09-21 1994-08-16 Toko Kabushiki Kaisha Variable capacitance diode device
JP2007059800A (en) * 2005-08-26 2007-03-08 Fuji Electric Device Technology Co Ltd Manufacturing method of vertical Zener diode and vertical Zener diode
JP2014179650A (en) * 2014-05-30 2014-09-25 Toshiba Corp Diode

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