JPS5586155A - Semiconductor device having protective circuit - Google Patents

Semiconductor device having protective circuit

Info

Publication number
JPS5586155A
JPS5586155A JP15764178A JP15764178A JPS5586155A JP S5586155 A JPS5586155 A JP S5586155A JP 15764178 A JP15764178 A JP 15764178A JP 15764178 A JP15764178 A JP 15764178A JP S5586155 A JPS5586155 A JP S5586155A
Authority
JP
Japan
Prior art keywords
electrodes
charge
region
ccd
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15764178A
Other languages
Japanese (ja)
Inventor
Kazuo Masaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15764178A priority Critical patent/JPS5586155A/en
Publication of JPS5586155A publication Critical patent/JPS5586155A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To increase the reliability of CCD by providing a composite circuit having a pn-junction in the same semiconductor substrate on which a CCD is formed, producing a forward voltage and absorbing the charge here when a false signal charge has generated. CONSTITUTION:p-Type epitaxial layer 12 is grown on n-type semiconductor substrate 11, and n<+>-type regions 13 and n<+>-type region 14, surrounds this, are formed by diffusion in layer 12; and the entire surface is covered with insulating film 15. Next, film 15 on regions 13 and 14 is removed, and on film 15 lying at a distance from this are fitted charge transfer electrodes 18-20. Region 13 is provided with protective electrode 17, and this is connected to any one of electrodes 18-20. When the CCD is three-phase driven, a protective electrode is provided also in region 14 and this is connected to other electrodes 19 and 20. In this structure, a positive voltage is impressed on electrodes 18-20 and charge below the electrodes is transferred. But, when a negative voltage is impressed by some reason or another, a forward voltage is produced in the pn-junction of region 13 and a false charge is absorbed.
JP15764178A 1978-12-22 1978-12-22 Semiconductor device having protective circuit Pending JPS5586155A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15764178A JPS5586155A (en) 1978-12-22 1978-12-22 Semiconductor device having protective circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15764178A JPS5586155A (en) 1978-12-22 1978-12-22 Semiconductor device having protective circuit

Publications (1)

Publication Number Publication Date
JPS5586155A true JPS5586155A (en) 1980-06-28

Family

ID=15654155

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15764178A Pending JPS5586155A (en) 1978-12-22 1978-12-22 Semiconductor device having protective circuit

Country Status (1)

Country Link
JP (1) JPS5586155A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4859624A (en) * 1987-07-31 1989-08-22 Kabushiki Kaisha Toshiba Manufacturing method of semiconductor device having CCD and peripheral circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4859624A (en) * 1987-07-31 1989-08-22 Kabushiki Kaisha Toshiba Manufacturing method of semiconductor device having CCD and peripheral circuit

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