JPS556847A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS556847A
JPS556847A JP7899978A JP7899978A JPS556847A JP S556847 A JPS556847 A JP S556847A JP 7899978 A JP7899978 A JP 7899978A JP 7899978 A JP7899978 A JP 7899978A JP S556847 A JPS556847 A JP S556847A
Authority
JP
Japan
Prior art keywords
insulating film
field plates
type base
type emitter
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7899978A
Other languages
Japanese (ja)
Inventor
Mikio Bessho
Seiichi Nagai
Hisao Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7899978A priority Critical patent/JPS556847A/en
Publication of JPS556847A publication Critical patent/JPS556847A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To remove increse in the leakage current by shielding the effect of negative load attracted to the surface of the insulating with a field plate when a forward blocking voltage or reverse blocking voltage is applied. CONSTITUTION:Field plates 15 and 15' are provided on a semiconductor substrate 1 which serves as a N-type base region at or near the terminals 9 and 11 of a forward blocking junction 7 and a reverse blocking junction 10, extending through an insulating film 6 or the insulating film 6 and an insulating film 13. The field plates 15 and 15' are electrically connected to a N-type emitter 5 or a P-type base 4 in the former case and to a P-type emitter in the latter case.
JP7899978A 1978-06-28 1978-06-28 Semiconductor device Pending JPS556847A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7899978A JPS556847A (en) 1978-06-28 1978-06-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7899978A JPS556847A (en) 1978-06-28 1978-06-28 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS556847A true JPS556847A (en) 1980-01-18

Family

ID=13677583

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7899978A Pending JPS556847A (en) 1978-06-28 1978-06-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS556847A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61102064A (en) * 1984-10-25 1986-05-20 Nec Corp Lateral type PNPN element
JPS63174369A (en) * 1987-01-14 1988-07-18 Mitsubishi Electric Corp semiconductor equipment
JPH02216868A (en) * 1989-02-17 1990-08-29 Nec Corp Semiconductor integrated circuit
FR2666174A1 (en) * 1990-08-21 1992-02-28 Sgs Thomson Microelectronics LOW LEAKAGE HIGH VOLTAGE SEMICONDUCTOR COMPONENT.

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61102064A (en) * 1984-10-25 1986-05-20 Nec Corp Lateral type PNPN element
JPS63174369A (en) * 1987-01-14 1988-07-18 Mitsubishi Electric Corp semiconductor equipment
JPH02216868A (en) * 1989-02-17 1990-08-29 Nec Corp Semiconductor integrated circuit
FR2666174A1 (en) * 1990-08-21 1992-02-28 Sgs Thomson Microelectronics LOW LEAKAGE HIGH VOLTAGE SEMICONDUCTOR COMPONENT.

Similar Documents

Publication Publication Date Title
JPS54157092A (en) Semiconductor integrated circuit device
GB935710A (en) Improvements in controlled semiconductor rectifiers
GB1251088A (en)
JPS55102267A (en) Semiconductor control element
JPS556847A (en) Semiconductor device
JPS5533075A (en) Mesa semiconductor device
JPS5588372A (en) Lateral type transistor
JPS5236470A (en) Semiconductor unit
JPS5561063A (en) Schottky barrier diode built-in transistor
JPS5713762A (en) Light energized semiconductor device
JPS5713758A (en) Semiconductor device
JPS5538080A (en) Semiconductor device
JPS5681970A (en) Semiconductor switching device
JPS55133553A (en) Semiconductor integrated device
JPS54159883A (en) Semiconductor device
JPS54141578A (en) Semiconductor device
JPS5373327A (en) Power source system
JPS5575254A (en) Semiconductor device
JPS55107278A (en) Photoelectric conversion device
JPS5339073A (en) Semiconductor device
JPS5587476A (en) Semiconductor device
JPS5289474A (en) Reach-through type semiconductor device
JPS5612779A (en) Zener diode
JPS57111065A (en) Mos field effect type semiconductor circuit device
JPS553685A (en) Semiconductor device