JPS5586868A - Light-emitting material - Google Patents
Light-emitting materialInfo
- Publication number
- JPS5586868A JPS5586868A JP16173278A JP16173278A JPS5586868A JP S5586868 A JPS5586868 A JP S5586868A JP 16173278 A JP16173278 A JP 16173278A JP 16173278 A JP16173278 A JP 16173278A JP S5586868 A JPS5586868 A JP S5586868A
- Authority
- JP
- Japan
- Prior art keywords
- low
- emitting material
- light
- doped fluorescent
- fluorescent material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title abstract 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract 4
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 abstract 2
- 229910052733 gallium Inorganic materials 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 239000011787 zinc oxide Substances 0.000 abstract 2
- 238000001354 calcination Methods 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- 229910052716 thallium Inorganic materials 0.000 abstract 1
Landscapes
- Luminescent Compositions (AREA)
Abstract
PURPOSE: To provide a red light-emitting material which can be excited by low- energy electron beam, and is composed of a Cr-doped fluorescent material and a low-resistance material composed mainly of zinc oxide.
CONSTITUTION: A composition composed of (A) 1 part by weight of a Cr-doped fluorescent material obtained by adding 10-5W5×10-2g (reduced to Cr2O3) of Cr to 1g of an oxide of formula M2O3 (M is B, Al, Ga, or In), and calcining the mixture at 130W1600°C, and (B) 14:1W1:14 parts of a low-resistance material obtained by adding one or more elements selected from B, Al, Ga, In, and Tl, to ZnO.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16173278A JPS5586868A (en) | 1978-12-25 | 1978-12-25 | Light-emitting material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16173278A JPS5586868A (en) | 1978-12-25 | 1978-12-25 | Light-emitting material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5586868A true JPS5586868A (en) | 1980-07-01 |
Family
ID=15740823
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16173278A Pending JPS5586868A (en) | 1978-12-25 | 1978-12-25 | Light-emitting material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5586868A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61183382A (en) * | 1985-02-11 | 1986-08-16 | エヌ・ベー・フイリツプス・フルーイランペンフアブリケン | Cathode ray tube |
| US5262350A (en) * | 1980-06-30 | 1993-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Forming a non single crystal semiconductor layer by using an electric current |
-
1978
- 1978-12-25 JP JP16173278A patent/JPS5586868A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5262350A (en) * | 1980-06-30 | 1993-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Forming a non single crystal semiconductor layer by using an electric current |
| JPS61183382A (en) * | 1985-02-11 | 1986-08-16 | エヌ・ベー・フイリツプス・フルーイランペンフアブリケン | Cathode ray tube |
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