JPS5587435A - Method of producing semiconductor device - Google Patents

Method of producing semiconductor device

Info

Publication number
JPS5587435A
JPS5587435A JP16402478A JP16402478A JPS5587435A JP S5587435 A JPS5587435 A JP S5587435A JP 16402478 A JP16402478 A JP 16402478A JP 16402478 A JP16402478 A JP 16402478A JP S5587435 A JPS5587435 A JP S5587435A
Authority
JP
Japan
Prior art keywords
photoresist film
tube
remove
high frequency
50khzw6mhz
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16402478A
Other languages
Japanese (ja)
Other versions
JPS617730B2 (en
Inventor
Minoru Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16402478A priority Critical patent/JPS5587435A/en
Publication of JPS5587435A publication Critical patent/JPS5587435A/en
Publication of JPS617730B2 publication Critical patent/JPS617730B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: To remove in a short time a photoresist film from a semiconductor substrate, which has been used in a dry etching step or ion injection step, by using an etching gas excited by a high frequency current of 50kHzW6MHz.
CONSTITUTION: A semiconductor substrate 1 having thereon a photoresist film which has been used as a mask in a dry etching step or ion injection step and which has been changed in quality is placed on a substrate holder 2 so as to be put into a reaction tube 3. The air in the tube 3 is then removed throughly to make the interior thereof vacuous. O2 gas is introduced into the vacuous tube 3 through reaction gas inlet ports 4 such that the internal pressure of the tube 3 is 0.1W1 Torr. Then, a high frequency current, the frequency of which is selected from 50kHzW6MHz taking various conditions into consideration, is applied to a high frequency coil 5 provided on the circumferential surface of the tube 3, to rapidly reduce the photoresist film to ashes and remove the ashes from the substrate 1. According to this method, a photoresist film can be removed in 2 minutes/μm which is 1/5 of 10 minutes/μm required to remove a similar photoresist film by using a regular current of 13.56MHz.
COPYRIGHT: (C)1980,JPO&Japio
JP16402478A 1978-12-25 1978-12-25 Method of producing semiconductor device Granted JPS5587435A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16402478A JPS5587435A (en) 1978-12-25 1978-12-25 Method of producing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16402478A JPS5587435A (en) 1978-12-25 1978-12-25 Method of producing semiconductor device

Publications (2)

Publication Number Publication Date
JPS5587435A true JPS5587435A (en) 1980-07-02
JPS617730B2 JPS617730B2 (en) 1986-03-08

Family

ID=15785334

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16402478A Granted JPS5587435A (en) 1978-12-25 1978-12-25 Method of producing semiconductor device

Country Status (1)

Country Link
JP (1) JPS5587435A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5685823A (en) * 1979-11-13 1981-07-13 Itt Ion implantation process
JPS5712669A (en) * 1980-06-27 1982-01-22 Nec Corp Printer
JPS5712679A (en) * 1980-06-27 1982-01-22 Nec Corp Printer
JPS5712668A (en) * 1980-06-27 1982-01-22 Nec Corp Printer
JPS5712677A (en) * 1980-06-27 1982-01-22 Nec Corp Printer
JPS5712670A (en) * 1980-06-27 1982-01-22 Nec Corp Printer
JPS59119830A (en) * 1982-12-27 1984-07-11 Fujitsu Ltd Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4834039A (en) * 1971-09-03 1973-05-15

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4834039A (en) * 1971-09-03 1973-05-15

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5685823A (en) * 1979-11-13 1981-07-13 Itt Ion implantation process
JPS5712669A (en) * 1980-06-27 1982-01-22 Nec Corp Printer
JPS5712679A (en) * 1980-06-27 1982-01-22 Nec Corp Printer
JPS5712668A (en) * 1980-06-27 1982-01-22 Nec Corp Printer
JPS5712677A (en) * 1980-06-27 1982-01-22 Nec Corp Printer
JPS5712670A (en) * 1980-06-27 1982-01-22 Nec Corp Printer
JPS59119830A (en) * 1982-12-27 1984-07-11 Fujitsu Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS617730B2 (en) 1986-03-08

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