JPS5587440A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5587440A
JPS5587440A JP16402778A JP16402778A JPS5587440A JP S5587440 A JPS5587440 A JP S5587440A JP 16402778 A JP16402778 A JP 16402778A JP 16402778 A JP16402778 A JP 16402778A JP S5587440 A JPS5587440 A JP S5587440A
Authority
JP
Japan
Prior art keywords
layer
film
subjected
high molecular
rays
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16402778A
Other languages
Japanese (ja)
Inventor
Moritaka Nakamura
Ryuichi Ogawa
Kazuo Toda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16402778A priority Critical patent/JPS5587440A/en
Publication of JPS5587440A publication Critical patent/JPS5587440A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To simply etch an SiO2 film on an Si substrate by forming on the film a layer of a high molecular material which generates double bonds therein when it is subjected to irradiation of an electron beam or X-rays, subjecting the layer of high molecular mateial to exposure treatment, and exposing the resulting layer to a hydrogen fluoride-containing gas.
CONSTITUTION: When an SiO2 layer 12 formed on an Si substrate 11 is bored, the layer 12 is masked with a resist material consisting of a high molecular material 13, such as polydifluoroethylene which generates double bonds when it is subjected to irradiation of electron rays or X-rays. The masking film 13 is then subjected to exposure treatment in accordance with a predetermined pattern, and exposed to hydrogen fluoride-containing gas so as to etch that portion of the layer 12 which is under an exposed portion of the film 13 earlier than that portion of the layer 12 which is under an unexposed portion of the film 13. After a desired bore 14 has been obtained, the film 13 is removed. According to this method, the work efficiency can be much improved since the number of steps is far smaller than that of a photoresist method having a developing step, rinsing step and drying step.
COPYRIGHT: (C)1980,JPO&Japio
JP16402778A 1978-12-25 1978-12-25 Manufacture of semiconductor device Pending JPS5587440A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16402778A JPS5587440A (en) 1978-12-25 1978-12-25 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16402778A JPS5587440A (en) 1978-12-25 1978-12-25 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5587440A true JPS5587440A (en) 1980-07-02

Family

ID=15785401

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16402778A Pending JPS5587440A (en) 1978-12-25 1978-12-25 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5587440A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5374375A (en) * 1976-12-15 1978-07-01 Toshiba Corp Etching method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5374375A (en) * 1976-12-15 1978-07-01 Toshiba Corp Etching method

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