JPS5587480A - Insulated gate type field effect transistor and manufacture thereof - Google Patents

Insulated gate type field effect transistor and manufacture thereof

Info

Publication number: JPS5587480A
Authority: JP; Japan
Prior art keywords: layer; groove; manufacture; film; field effect
Prior art date: 1978-12-25
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP16216378A

Other languages

English (en)

Inventor

Kunihiko Hirashima

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Pioneer Corp

Original Assignee

Pioneer Electronic Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1978-12-25

Filing date

1978-12-25

Publication date

1980-07-02

1978-12-25 Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp

1978-12-25 Priority to JP16216378A priority Critical patent/JPS5587480A/ja

1980-07-02 Publication of JPS5587480A publication Critical patent/JPS5587480A/ja

Status Pending legal-status Critical Current

Links

230000005669 field effect Effects 0.000 title 1
238000004519 manufacturing process Methods 0.000 title 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
239000000758 substrate Substances 0.000 abstract 3
229910052681 coesite Inorganic materials 0.000 abstract 2
229910052906 cristobalite Inorganic materials 0.000 abstract 2
239000000377 silicon dioxide Substances 0.000 abstract 2
229910052682 stishovite Inorganic materials 0.000 abstract 2
229910052905 tridymite Inorganic materials 0.000 abstract 2
238000005530 etching Methods 0.000 abstract 1
230000003071 parasitic effect Effects 0.000 abstract 1
229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
239000004065 semiconductor Substances 0.000 abstract 1

Landscapes

Electrodes Of Semiconductors (AREA)

JP16216378A 1978-12-25 1978-12-25 Insulated gate type field effect transistor and manufacture thereof Pending JPS5587480A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP16216378A JPS5587480A (en)	1978-12-25	1978-12-25	Insulated gate type field effect transistor and manufacture thereof

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP16216378A JPS5587480A (en)	1978-12-25	1978-12-25	Insulated gate type field effect transistor and manufacture thereof

Publications (1)

Publication Number	Publication Date
JPS5587480A true JPS5587480A (en)	1980-07-02

Family

ID=15749218

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP16216378A Pending JPS5587480A (en)	1978-12-25	1978-12-25	Insulated gate type field effect transistor and manufacture thereof

Country Status (1)

Country	Link
JP (1)	JPS5587480A (ja)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS508483A (ja) *	1973-05-21	1975-01-28
JPS52113173A (en) *	1976-03-17	1977-09-22	Matsushita Electric Ind Co Ltd	Mos type semiconductor device

1978
- 1978-12-25 JP JP16216378A patent/JPS5587480A/ja active Pending

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS508483A (ja) *	1973-05-21	1975-01-28
JPS52113173A (en) *	1976-03-17	1977-09-22	Matsushita Electric Ind Co Ltd	Mos type semiconductor device

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