JPS5588057A - Production of photo mask - Google Patents

Production of photo mask

Info

Publication number
JPS5588057A
JPS5588057A JP16329978A JP16329978A JPS5588057A JP S5588057 A JPS5588057 A JP S5588057A JP 16329978 A JP16329978 A JP 16329978A JP 16329978 A JP16329978 A JP 16329978A JP S5588057 A JPS5588057 A JP S5588057A
Authority
JP
Japan
Prior art keywords
film
pattern
mask
resist
metal chromium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16329978A
Other languages
Japanese (ja)
Inventor
Masaki Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP16329978A priority Critical patent/JPS5588057A/en
Publication of JPS5588057A publication Critical patent/JPS5588057A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To improve the productivity and reduce the cost, by using the specified resist pattern as mask, exposing the shield film part mainly composed of exposed metal chromium film in a plasma of carbon fluoride base, and obtaining etching resistant film of reverse pattern. CONSTITUTION:A metal chromium film (shield film) 2 is coated on a glass substrate 1, and a negative type photo resist is spread thereon. After prebaking, ultraviolet rays are radiated to the desired part of this resist film to draw a pattern, and further a resist pattern 3 is formed after developing process. This pattern is exposed in CHF3 plasma, and etching resistant film of reverse pattern 4 is formed in the exposed metal chromium film 2 part. Then, removing the resist pattern 3, dipping in a specified chemical etching solution, the exposed part of the metal chromium film 2 is removed, using the etching resistant film 4 as the mask, and a positive type photo mask 6 having a mask pattern 5 is obtained.
JP16329978A 1978-12-27 1978-12-27 Production of photo mask Pending JPS5588057A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16329978A JPS5588057A (en) 1978-12-27 1978-12-27 Production of photo mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16329978A JPS5588057A (en) 1978-12-27 1978-12-27 Production of photo mask

Publications (1)

Publication Number Publication Date
JPS5588057A true JPS5588057A (en) 1980-07-03

Family

ID=15771180

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16329978A Pending JPS5588057A (en) 1978-12-27 1978-12-27 Production of photo mask

Country Status (1)

Country Link
JP (1) JPS5588057A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4514489A (en) * 1983-09-01 1985-04-30 Motorola, Inc. Photolithography process
KR20020095703A (en) * 2001-06-15 2002-12-28 주식회사 하이닉스반도체 Method for manufacturing phase shift mask
CN103019042A (en) * 2012-11-29 2013-04-03 上海华力微电子有限公司 Method for improving stability of alignment precision of high-transparency mask plate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4514489A (en) * 1983-09-01 1985-04-30 Motorola, Inc. Photolithography process
KR20020095703A (en) * 2001-06-15 2002-12-28 주식회사 하이닉스반도체 Method for manufacturing phase shift mask
CN103019042A (en) * 2012-11-29 2013-04-03 上海华力微电子有限公司 Method for improving stability of alignment precision of high-transparency mask plate

Similar Documents

Publication Publication Date Title
GB1523535A (en) Selfsupporting masks
EP0020776A4 (en) METHOD FOR SHAPING PATTERNS.
JPS5548935A (en) Forming of electrode pattern
JPS5569265A (en) Pattern-forming method
JPS5630129A (en) Manufacture of photomask
JPS5557233A (en) Method for manufacturing fluorescent screen
JPS5574544A (en) Photo mask correcting method
JPS5339060A (en) Lot number marking method to wafers
JPS5632143A (en) Manufacture of photomask
JPS57112025A (en) Formation of pattern
JPS57212445A (en) Production of photomask
JPS5655950A (en) Photographic etching method
JPS5741638A (en) Photomask for electron beam
JPS5596952A (en) Production of photomask
JPS55163539A (en) Photo mask
JPS5794750A (en) Formation of micropattern
JPS5699342A (en) Manufacture of photomask
JPS56107241A (en) Dry etching method
JPS5743425A (en) Forming method for fine pattern
JPS5748731A (en) Manufacture of mask
JPS561534A (en) Manufacture of photomask
JPS56130750A (en) Manufacture of mask
JPS56108880A (en) Selectively etching method for silicon oxide film
JPS55113046A (en) Pattern forming method
JPS55127557A (en) Photomask and production thereof