JPS5743425A - Forming method for fine pattern - Google Patents

Forming method for fine pattern

Info

Publication number
JPS5743425A
JPS5743425A JP55119976A JP11997680A JPS5743425A JP S5743425 A JPS5743425 A JP S5743425A JP 55119976 A JP55119976 A JP 55119976A JP 11997680 A JP11997680 A JP 11997680A JP S5743425 A JPS5743425 A JP S5743425A
Authority
JP
Japan
Prior art keywords
metallic film
resist
thin
layer
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55119976A
Other languages
Japanese (ja)
Inventor
Yoshikazu Obayashi
Hiroji Harada
Isao Shibayama
Yoji Masuko
Kyusaku Nishioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP55119976A priority Critical patent/JPS5743425A/en
Publication of JPS5743425A publication Critical patent/JPS5743425A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials

Landscapes

  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To obtain a fine pattern by forming a thin metallic film on a lower thin resist and an upper thick resist on the metallic film, etching the metallic film with the upper resist as a mask, and further etching the metallic film with the lower resist as a mask. CONSTITUTION:A thin metallic film 2 is formed on a glass substrate 1, a thin lower resist layer 6 is coated on the film, is patterned, and the processed part 4 is exposed. Then, a thin metallic film 7 is coated on the lower resist layer 6 including the exposed part, an upper resist layer 8 is coated thereon, and is patterned. With the upper resist layer 8 thus patterned as a mask the intermediate metallic film 7 is dry etched and removed, and the metallic film 2 is positively removed with high accuracy by dry etching with the layer 8, the film 7 and the layer 6 as masks.
JP55119976A 1980-08-28 1980-08-28 Forming method for fine pattern Pending JPS5743425A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55119976A JPS5743425A (en) 1980-08-28 1980-08-28 Forming method for fine pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55119976A JPS5743425A (en) 1980-08-28 1980-08-28 Forming method for fine pattern

Publications (1)

Publication Number Publication Date
JPS5743425A true JPS5743425A (en) 1982-03-11

Family

ID=14774838

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55119976A Pending JPS5743425A (en) 1980-08-28 1980-08-28 Forming method for fine pattern

Country Status (1)

Country Link
JP (1) JPS5743425A (en)

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