JPS5591155A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5591155A
JPS5591155A JP16319878A JP16319878A JPS5591155A JP S5591155 A JPS5591155 A JP S5591155A JP 16319878 A JP16319878 A JP 16319878A JP 16319878 A JP16319878 A JP 16319878A JP S5591155 A JPS5591155 A JP S5591155A
Authority
JP
Japan
Prior art keywords
film
type
electrostatic induction
layer
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16319878A
Other languages
Japanese (ja)
Inventor
Shoichi Shimizu
Shigeru Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP16319878A priority Critical patent/JPS5591155A/en
Publication of JPS5591155A publication Critical patent/JPS5591155A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To accelerate the operation of a semiconductor integrated circuit device by integrating a Schottky diode for limiting the theoretical amplitude of the inegrated circuit on the same semiconductor wafer when integrating electrostatic induction transistors and lateral bipolar transistors on the wafer. CONSTITUTION:An n-type layer 12 is epitaxially grown on an n<+>-type silicon substrate 11, coated with a laminated film having an SiO2 film 13 and an Si3N4 film 14, predetermined openings are perforated at these films 13 and 14, and a thin SiO2 film 15 is coated on the surface of the layer 12 thus exposed. Then, a mast of resist film 161 is formed, ion is implanted through the film 15 to form thereby a p<+>-type region 17 serving as a collector of a gate and lateral element of an electrostatic induction element and a p<+>-type emitter region 18 of the lateral element in the vicinity of the region 17. Then, the film 161 is further modified into a film 162, n<+>-type drain regions 191 and 192 of the electrostatic induction element are provided, the film 162 is removed, openings are perforated on the films 14 and 15, electrodes 201-205 are mounted at the respective regions, the electrode 205 is brought into contact with the layer 12 to form thus a Schottky diode. Thus, the diode is connected to the electrode 202 to construct a signal input terminal.
JP16319878A 1978-12-27 1978-12-27 Semiconductor integrated circuit device Pending JPS5591155A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16319878A JPS5591155A (en) 1978-12-27 1978-12-27 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16319878A JPS5591155A (en) 1978-12-27 1978-12-27 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5591155A true JPS5591155A (en) 1980-07-10

Family

ID=15769132

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16319878A Pending JPS5591155A (en) 1978-12-27 1978-12-27 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5591155A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60106178A (en) * 1983-11-15 1985-06-11 Toshiba Corp Gate circuit of compound semiconductor element

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5160177A (en) * 1974-09-03 1976-05-25 Western Electric Co Handotaisochi oyobi sonoseizohoho
JPS5416985A (en) * 1977-07-07 1979-02-07 Handotai Kenkyu Shinkokai Electrostatic induction transistor and semiconductor ic

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5160177A (en) * 1974-09-03 1976-05-25 Western Electric Co Handotaisochi oyobi sonoseizohoho
JPS5416985A (en) * 1977-07-07 1979-02-07 Handotai Kenkyu Shinkokai Electrostatic induction transistor and semiconductor ic

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60106178A (en) * 1983-11-15 1985-06-11 Toshiba Corp Gate circuit of compound semiconductor element

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