JPS5591815A - Silicon epitaxial growth - Google Patents

Silicon epitaxial growth

Info

Publication number
JPS5591815A
JPS5591815A JP16229278A JP16229278A JPS5591815A JP S5591815 A JPS5591815 A JP S5591815A JP 16229278 A JP16229278 A JP 16229278A JP 16229278 A JP16229278 A JP 16229278A JP S5591815 A JPS5591815 A JP S5591815A
Authority
JP
Japan
Prior art keywords
decomposed gas
epitaxial growth
hardly
film thickness
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16229278A
Other languages
Japanese (ja)
Inventor
Mikio Takagi
Mamoru Maeda
Shuichi Miyamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16229278A priority Critical patent/JPS5591815A/en
Publication of JPS5591815A publication Critical patent/JPS5591815A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To make uniform the film thickness distribution of a plurality of silicon wafers by introducing easily-decomposed gas and hardly-decomposed gas simultaneously or alternatively in the method of epitaxial growth of silicon under reduced pressure.
CONSTITUTION: When making the growth of silicon monocrystals on wafers by introducing gas in the redetermined direction, easily-decomposed gas such as SiH4 and SiH2Cl2 and hardly-decomposed gas such as SiCl4 are introduced simultaneously or alternatively into a reduced pressure epitaxial growth apparatus accommodating a plurality of silicon wafers. In the case only easily-decomposed gas is used, the relation between film thickness and position of wafer is given by a line raising towards right as shown in the upper figure. Contrasting with this, in the case only hardly-decomposed gas is used, the relation therebetween is given by a line lowering towards right as shown in the below figure. Therefore, it becomes possible to make epitaxial growth with uniform film thickness by mixing both gases at proper ratio.
COPYRIGHT: (C)1980,JPO&Japio
JP16229278A 1978-12-29 1978-12-29 Silicon epitaxial growth Pending JPS5591815A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16229278A JPS5591815A (en) 1978-12-29 1978-12-29 Silicon epitaxial growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16229278A JPS5591815A (en) 1978-12-29 1978-12-29 Silicon epitaxial growth

Publications (1)

Publication Number Publication Date
JPS5591815A true JPS5591815A (en) 1980-07-11

Family

ID=15751707

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16229278A Pending JPS5591815A (en) 1978-12-29 1978-12-29 Silicon epitaxial growth

Country Status (1)

Country Link
JP (1) JPS5591815A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5933847A (en) * 1982-08-18 1984-02-23 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS5933846A (en) * 1982-08-18 1984-02-23 Mitsubishi Electric Corp Manufacture of semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5132498A (en) * 1974-09-13 1976-03-19 Asahi Glass Co Ltd
JPS5312911A (en) * 1976-07-22 1978-02-06 Kuratomi Tatsuro Manufacture of stereocrystal boron nitride solidified matters
JPS5319181A (en) * 1976-08-06 1978-02-22 Hitachi Ltd Low pressure reaction apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5132498A (en) * 1974-09-13 1976-03-19 Asahi Glass Co Ltd
JPS5312911A (en) * 1976-07-22 1978-02-06 Kuratomi Tatsuro Manufacture of stereocrystal boron nitride solidified matters
JPS5319181A (en) * 1976-08-06 1978-02-22 Hitachi Ltd Low pressure reaction apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5933847A (en) * 1982-08-18 1984-02-23 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS5933846A (en) * 1982-08-18 1984-02-23 Mitsubishi Electric Corp Manufacture of semiconductor device

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