JPS5593261A - Horizontal-type transistor - Google Patents

Horizontal-type transistor

Info

Publication number
JPS5593261A
JPS5593261A JP193979A JP193979A JPS5593261A JP S5593261 A JPS5593261 A JP S5593261A JP 193979 A JP193979 A JP 193979A JP 193979 A JP193979 A JP 193979A JP S5593261 A JPS5593261 A JP S5593261A
Authority
JP
Japan
Prior art keywords
layer
collector
base
concentration
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP193979A
Other languages
Japanese (ja)
Inventor
Kazuo Adachi
Yuji Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP193979A priority Critical patent/JPS5593261A/en
Publication of JPS5593261A publication Critical patent/JPS5593261A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To improve the characteristic by providing thin n-type base layer which surrounds p-emitter layer provided on n-epitaxial layer with its concentration gradually decreasing toward collector layer, by also providing p-layer of lower concentration than collector across the base and collector layer.
CONSTITUTION: An n+-layer is provided by making an opening in oxidized film on n-epitaxial layer 2 equipped with n+-buried layer 3, p+-separated layers 4a, 4b. In addition, p+-type emitter layer 11a and collector layer 11b are provided by making an opening selectively. Next ion is injected to selectively form p--collector layer, so that ohmic n+-layer 14 for base connection is formed. Finally electrodes E, B, C are added. Under this constitution, base 13 is narrow in width and highly concentrated and its concentration is reduced toward collector to form a carrier accelerating field. Consequently hfe, fT become higher. Depression layer formed on collector-base junction does not expand due to the high concentration of the base layer. For this reason, collector-emitter dielectric resistance is increased.
COPYRIGHT: (C)1980,JPO&Japio
JP193979A 1979-01-09 1979-01-09 Horizontal-type transistor Pending JPS5593261A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP193979A JPS5593261A (en) 1979-01-09 1979-01-09 Horizontal-type transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP193979A JPS5593261A (en) 1979-01-09 1979-01-09 Horizontal-type transistor

Publications (1)

Publication Number Publication Date
JPS5593261A true JPS5593261A (en) 1980-07-15

Family

ID=11515571

Family Applications (1)

Application Number Title Priority Date Filing Date
JP193979A Pending JPS5593261A (en) 1979-01-09 1979-01-09 Horizontal-type transistor

Country Status (1)

Country Link
JP (1) JPS5593261A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60124869A (en) * 1983-12-06 1985-07-03 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Lateral p-n-p transistor
JPH01181458A (en) * 1988-01-11 1989-07-19 Toshiba Corp Semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49104576A (en) * 1973-02-07 1974-10-03
JPS49105487A (en) * 1973-02-07 1974-10-05
JPS5240077A (en) * 1975-09-26 1977-03-28 Hitachi Ltd Process for production of lateral transistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49104576A (en) * 1973-02-07 1974-10-03
JPS49105487A (en) * 1973-02-07 1974-10-05
JPS5240077A (en) * 1975-09-26 1977-03-28 Hitachi Ltd Process for production of lateral transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60124869A (en) * 1983-12-06 1985-07-03 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Lateral p-n-p transistor
JPH01181458A (en) * 1988-01-11 1989-07-19 Toshiba Corp Semiconductor device

Similar Documents

Publication Publication Date Title
JPS5539619A (en) Thyristor
JPS5691478A (en) Manufacture of punch-through type diode
JPS55165674A (en) Semiconductor device
GB1533156A (en) Semiconductor integrated circuits
JPS5593261A (en) Horizontal-type transistor
JPS5365675A (en) Semiconductor device
JPS57173974A (en) Semiconductor device
JPS5713758A (en) Semiconductor device
JPS55158663A (en) Transistor
JPS5561063A (en) Schottky barrier diode built-in transistor
JPS568873A (en) Bipolar transistor
JP2771311B2 (en) Semiconductor device
JPS55113371A (en) Power transistor
JPS57206072A (en) Semiconductor device
JPS5529175A (en) Planar type transistor
JPS57198657A (en) Semiconductor device
JPS538574A (en) Lateral thyristor
JPS5617064A (en) Transistor
JPS5735366A (en) Semiconductor integrated circuit device
JPH02312243A (en) Semiconductor device
JPS5260078A (en) Pnp type transistor for semiconductor integrated circuit
JPS54162481A (en) Semiconductor switch
JPS5533007A (en) Semiconductor intergated circuit
JPS55158669A (en) Lateral type transistor
JPS55160459A (en) Semiconductor integrated circuit