JPS55158663A - Transistor - Google Patents

Abstract

PURPOSE:To decrease parasitic effect by a method wheren a P-base, an N<+>-emitter and an N<+>-collector connecting layer are surrounded by the capture layers of the same conduction type as the base layer and the capture layers and a collector electrode are connected. CONSTITUTION:N-epitaxial layers 22 on a P-type substrate 21 with an N<+> buried layer 25 are separated by P<+>-layers 24. A P-base 26, an N<+> emitter 27 and an N<+> collector connecting layer 28 and further P-type capture layer 29 surrounding these layers are mounted onto a surface of an island region 23 formed by means of double diffusion. An emitter electrode 30 and a base electrode 31 are formed through an oxide film, and the layers 28, 29 are connected by a collector electrode 32. Thus, the currents of a PNP-transistor flowing through the substrate 21 are approximately recovered, and flowed back to the collector electrode 32. When the capture layers 29 are made up at the same time as the separating layers 24 at that time and an original NPN transistor is completely surrounded by the capture layers 29 and the buried layer 25, reactive currents flowing through a parasitic PNP transistor can be recovered to the collector electrode 32 approximately complete, and parasitic effect can be removed approximately perfect.