JPS5593591A - Driving system of semiconductor memory device - Google Patents

Driving system of semiconductor memory device

Info

Publication number
JPS5593591A
JPS5593591A JP16511878A JP16511878A JPS5593591A JP S5593591 A JPS5593591 A JP S5593591A JP 16511878 A JP16511878 A JP 16511878A JP 16511878 A JP16511878 A JP 16511878A JP S5593591 A JPS5593591 A JP S5593591A
Authority
JP
Japan
Prior art keywords
gate
gates
substrate
silicon
information
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16511878A
Other languages
Japanese (ja)
Other versions
JPS6025030B2 (en
Inventor
Takashi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP53165118A priority Critical patent/JPS6025030B2/en
Publication of JPS5593591A publication Critical patent/JPS5593591A/en
Publication of JPS6025030B2 publication Critical patent/JPS6025030B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels

Landscapes

  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To make it possible to write, read and erase information with a low voltage and secure non-volatilization of information by extending a floating gate onto an insulating film for field to make the floating gate opposite to two kinds of control gate. CONSTITUTION:Oxide film 12 for field, an n<+>-type source region, an n<+>-type drain region, gate oxide film 15, silicon floating gate 16, silicon first control gate 171, silicon second control gate 172, and phsphosilicate glass film 18 are formed on p- type silicon semiconductor substrate 11. Then, capacity C1 is formed between substrate 11 and gate 15, and capacity C2 is formed between gates 16 and 171, and capacity C3 is formed between gates 16 and 172, and C3>0 is defined. For information write, a prescribed voltage for write is applied to gates 171 and 172, and due to the polarity, a positive or negative charge is injected to gate 16 from the substrate 11 side. For information read, a prescribed voltage is applied to one of gates 171 and 172, and the other is set to the same potential as substrate 11.
JP53165118A 1978-12-29 1978-12-29 Drive method of semiconductor memory device Expired JPS6025030B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53165118A JPS6025030B2 (en) 1978-12-29 1978-12-29 Drive method of semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53165118A JPS6025030B2 (en) 1978-12-29 1978-12-29 Drive method of semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5593591A true JPS5593591A (en) 1980-07-16
JPS6025030B2 JPS6025030B2 (en) 1985-06-15

Family

ID=15806246

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53165118A Expired JPS6025030B2 (en) 1978-12-29 1978-12-29 Drive method of semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS6025030B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5823390A (en) * 1981-07-30 1983-02-12 Toshiba Corp Semiconductor storage device
JP2001168213A (en) * 1999-12-03 2001-06-22 Fujitsu Ltd Semiconductor memory device and method of manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5823390A (en) * 1981-07-30 1983-02-12 Toshiba Corp Semiconductor storage device
JP2001168213A (en) * 1999-12-03 2001-06-22 Fujitsu Ltd Semiconductor memory device and method of manufacturing the same

Also Published As

Publication number Publication date
JPS6025030B2 (en) 1985-06-15

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