JPS5743471A - Semiconductor memory cell - Google Patents

Semiconductor memory cell

Info

Publication number
JPS5743471A
JPS5743471A JP55119345A JP11934580A JPS5743471A JP S5743471 A JPS5743471 A JP S5743471A JP 55119345 A JP55119345 A JP 55119345A JP 11934580 A JP11934580 A JP 11934580A JP S5743471 A JPS5743471 A JP S5743471A
Authority
JP
Japan
Prior art keywords
gate
electrode
acutely
erasing
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55119345A
Other languages
Japanese (ja)
Inventor
Sadaaki Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55119345A priority Critical patent/JPS5743471A/en
Publication of JPS5743471A publication Critical patent/JPS5743471A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/683—Floating-gate IGFETs having only two programming levels programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling

Landscapes

  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To enable the selective erasure of unnecessary information by acutely foming the end of a floating gate and forming an erasing electrode via an insulating film at the end of the gate. CONSTITUTION:P type source and drain regions 2, 3 are formed on the surface of an N type silicon substrate 1, gate insulating films 5, 5' are formed, and floating gates 4 are buried in the insulating films. The end 13 of the gate 4 is formed acutely, and an erasing electrode 12 is arranged via the film 5 on the acute part. When a voltage is applied to the electrode 12, an electric field is concentrated, since the end 13 of the gate 4 is formed acutely, to this part to become a strong electric field, thereby occurring readily a tunnel effect and causing the charge to pass through the film 5'. Accordingly, when the source and drain electrodes 6, 7 are grounded and the electrode 12 is applied with the prescribed positive voltage, the electron collected to the gate 4 are flowed out to the electrode 12 by the tunnel effect, thereby erasing the stored infomation.
JP55119345A 1980-08-29 1980-08-29 Semiconductor memory cell Pending JPS5743471A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55119345A JPS5743471A (en) 1980-08-29 1980-08-29 Semiconductor memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55119345A JPS5743471A (en) 1980-08-29 1980-08-29 Semiconductor memory cell

Publications (1)

Publication Number Publication Date
JPS5743471A true JPS5743471A (en) 1982-03-11

Family

ID=14759180

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55119345A Pending JPS5743471A (en) 1980-08-29 1980-08-29 Semiconductor memory cell

Country Status (1)

Country Link
JP (1) JPS5743471A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59120692U (en) * 1983-02-01 1984-08-14 株式会社シマノ Guide for bicycle gear shift operation cable

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59120692U (en) * 1983-02-01 1984-08-14 株式会社シマノ Guide for bicycle gear shift operation cable

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