JPS559425A - Manufacturing method for semiconductor device - Google Patents

Manufacturing method for semiconductor device

Info

Publication number
JPS559425A
JPS559425A JP8200978A JP8200978A JPS559425A JP S559425 A JPS559425 A JP S559425A JP 8200978 A JP8200978 A JP 8200978A JP 8200978 A JP8200978 A JP 8200978A JP S559425 A JPS559425 A JP S559425A
Authority
JP
Japan
Prior art keywords
film
multicrystal
emitter
oxidized
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8200978A
Other languages
Japanese (ja)
Other versions
JPS6140145B2 (en
Inventor
Mineo Shimizu
Hironori Kitabayashi
Junichi Ochiai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP8200978A priority Critical patent/JPS559425A/en
Publication of JPS559425A publication Critical patent/JPS559425A/en
Publication of JPS6140145B2 publication Critical patent/JPS6140145B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE: To prevent shortcircuit between a collector and an emitter, as well as to reduce numbers of masking processes by eliminating etching operations of oxidized films from a series of processes until emitter diffusing is completed after a deep collector is formed.
CONSTITUTION: After an oxidized film 5 and the first nitrified film 6 are formed in sequence on a semiconductor substrate 1, unnecessary areas of these films are revomed to form a groove 7 which is treated by an oxidation treatment. Then the films 5 and 6 on active areas 4A and 4B is removed, and a multicrystal Si film and the second nitrified film 18 are formed in sequence. An opeining is made in the film 18, and N-type impurities are supplied through the multicrystal Si film 17, thus forming a deep collector 19. Then the ioxidation treatment is given to form an oxidized film 20. Leaving the film 18 only to an area that is to be used for the emitter, P-type impurities are supplied through the multicrystal Si film 17, and the oxidation treatment is given so that the exposing Si film is completely converted into an oxidized film 21. A side base area 22 is formed in this process. After the film 18 is removed, a main base area 23 and an emitter area 24 are formed in a self- aligning manner through the multicrystal Si film 17.
COPYRIGHT: (C)1980,JPO&Japio
JP8200978A 1978-07-07 1978-07-07 Manufacturing method for semiconductor device Granted JPS559425A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8200978A JPS559425A (en) 1978-07-07 1978-07-07 Manufacturing method for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8200978A JPS559425A (en) 1978-07-07 1978-07-07 Manufacturing method for semiconductor device

Publications (2)

Publication Number Publication Date
JPS559425A true JPS559425A (en) 1980-01-23
JPS6140145B2 JPS6140145B2 (en) 1986-09-08

Family

ID=13762514

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8200978A Granted JPS559425A (en) 1978-07-07 1978-07-07 Manufacturing method for semiconductor device

Country Status (1)

Country Link
JP (1) JPS559425A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5518387U (en) * 1978-07-25 1980-02-05
JPS5530807A (en) * 1978-08-25 1980-03-04 Hitachi Ltd Producing method of semiconductor device
JPS5835970A (en) * 1981-08-28 1983-03-02 Fujitsu Ltd Manufacture of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5119484A (en) * 1974-08-09 1976-02-16 Hitachi Ltd Handotaisochito sonoseizohoho
JPS5140866A (en) * 1974-10-04 1976-04-06 Nippon Electric Co

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5119484A (en) * 1974-08-09 1976-02-16 Hitachi Ltd Handotaisochito sonoseizohoho
JPS5140866A (en) * 1974-10-04 1976-04-06 Nippon Electric Co

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5518387U (en) * 1978-07-25 1980-02-05
JPS5530807A (en) * 1978-08-25 1980-03-04 Hitachi Ltd Producing method of semiconductor device
JPS5835970A (en) * 1981-08-28 1983-03-02 Fujitsu Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6140145B2 (en) 1986-09-08

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