JPS5530807A - Producing method of semiconductor device - Google Patents
Producing method of semiconductor deviceInfo
- Publication number
- JPS5530807A JPS5530807A JP10272178A JP10272178A JPS5530807A JP S5530807 A JPS5530807 A JP S5530807A JP 10272178 A JP10272178 A JP 10272178A JP 10272178 A JP10272178 A JP 10272178A JP S5530807 A JPS5530807 A JP S5530807A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- oxidized
- area
- polysilicon
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 6
- 229920005591 polysilicon Polymers 0.000 abstract 6
- 238000009792 diffusion process Methods 0.000 abstract 5
- 238000002955 isolation Methods 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
Landscapes
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Abstract
PURPOSE: To perform easy control of a base layer by driving ion after selectively changing a polysilicon layer into an oxidized layer when making a base area in a semiconductor area surrounded by an isolation oxidized film.
CONSTITUTION: A polysilicon layer is set on a semiconductor area surface surrounded by an isolation oxidized film formed by selective oxidization. after the polysilicon layer part except for an emitter area and a basecontrol part is selectively changed into an oxidized film, ion is driven through the polysilicon layer and the oxidized layer to form a base diffusion area. Since the oxidization of polysilicon is thus performed before the formation of the base diffusion area, the effect due to heat treatment is prevented and the control of seat resistance and diffusion depth of the base diffusion layer is easily performed. After the above process, the ion driving with the almost same thickness of the polysilicon and oxidized layers produces a uniform base diffusion layer.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10272178A JPS5530807A (en) | 1978-08-25 | 1978-08-25 | Producing method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10272178A JPS5530807A (en) | 1978-08-25 | 1978-08-25 | Producing method of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5530807A true JPS5530807A (en) | 1980-03-04 |
Family
ID=14335122
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10272178A Pending JPS5530807A (en) | 1978-08-25 | 1978-08-25 | Producing method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5530807A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5796567A (en) * | 1980-12-09 | 1982-06-15 | Nec Corp | Manufacture of semiconductor device |
| JPS5867060A (en) * | 1981-10-19 | 1983-04-21 | Oki Electric Ind Co Ltd | Manufacture of semiconductor integrated circuit device |
| JPH0894A (en) * | 1994-06-17 | 1996-01-09 | Nippon Tetorapotsuto Kk | Ornamental planting artificial rock |
| JPH09168335A (en) * | 1995-12-21 | 1997-06-30 | Yamatatsugumi:Kk | Concrete block for planting |
| JP3039196U (en) * | 1996-11-08 | 1997-07-11 | 稔 柿山 | Planting equipment |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4077462A (en) * | 1976-06-30 | 1978-03-07 | Allied Chemical Corporation | Chill roll casting of continuous filament |
| JPS53141591A (en) * | 1977-05-16 | 1978-12-09 | Nec Corp | Manufacture of semiconductor device |
| JPS559425A (en) * | 1978-07-07 | 1980-01-23 | Oki Electric Ind Co Ltd | Manufacturing method for semiconductor device |
-
1978
- 1978-08-25 JP JP10272178A patent/JPS5530807A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4077462A (en) * | 1976-06-30 | 1978-03-07 | Allied Chemical Corporation | Chill roll casting of continuous filament |
| JPS53141591A (en) * | 1977-05-16 | 1978-12-09 | Nec Corp | Manufacture of semiconductor device |
| JPS559425A (en) * | 1978-07-07 | 1980-01-23 | Oki Electric Ind Co Ltd | Manufacturing method for semiconductor device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5796567A (en) * | 1980-12-09 | 1982-06-15 | Nec Corp | Manufacture of semiconductor device |
| JPS5867060A (en) * | 1981-10-19 | 1983-04-21 | Oki Electric Ind Co Ltd | Manufacture of semiconductor integrated circuit device |
| JPH0894A (en) * | 1994-06-17 | 1996-01-09 | Nippon Tetorapotsuto Kk | Ornamental planting artificial rock |
| JPH09168335A (en) * | 1995-12-21 | 1997-06-30 | Yamatatsugumi:Kk | Concrete block for planting |
| JP3039196U (en) * | 1996-11-08 | 1997-07-11 | 稔 柿山 | Planting equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5555559A (en) | Method of fabricating semiconductor device | |
| JPS55127061A (en) | Manufacture of semiconductor memory | |
| JPS5494869A (en) | Production of semiconductor device | |
| JPS5515230A (en) | Semiconductor device and its manufacturing method | |
| JPS56115547A (en) | Manufacture of semiconductor device | |
| JPS56157025A (en) | Manufacture of semiconductor device | |
| JPS551166A (en) | Method of fabricating semiconductor | |
| JPS53123673A (en) | Manufacture of semiconductor device | |
| JPS5780768A (en) | Semiconductor device | |
| JPS54151379A (en) | Manufactue for semiconductor device | |
| JPS52154377A (en) | Forming method for contact parts in part of shallow diffused layer | |
| JPS52129276A (en) | Production of semiconductor device | |
| JPS5693370A (en) | Manufacture of mos-type semiconductor device | |
| JPS5779641A (en) | Manufacture of semiconductor device | |
| JPS5756966A (en) | Manufacture of semiconductor device | |
| JPS5717171A (en) | Manufacture of semiconductor device | |
| JPS5759320A (en) | Manufacture of semiconductor device | |
| JPS5378780A (en) | Preparation for semiconductor device | |
| JPS57122570A (en) | Forming method for impurity region in semiconductor | |
| JPS55138840A (en) | Method of fabricating semiconductor device | |
| JPS5310286A (en) | Production of semiconductor device | |
| JPS6430264A (en) | Manufacture of semiconductor device | |
| JPS5491071A (en) | Manufacture of silicon gate type field effect transistor | |
| JPS5662370A (en) | Manufacturing of semiconductor device | |
| JPS6423529A (en) | Manufacture of semiconductor device |