JPS559449A - Producing method of semiconductor device - Google Patents

Producing method of semiconductor device

Info

Publication number
JPS559449A
JPS559449A JP8240978A JP8240978A JPS559449A JP S559449 A JPS559449 A JP S559449A JP 8240978 A JP8240978 A JP 8240978A JP 8240978 A JP8240978 A JP 8240978A JP S559449 A JPS559449 A JP S559449A
Authority
JP
Japan
Prior art keywords
cvdsio
psg
minutes
wire
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8240978A
Other languages
Japanese (ja)
Inventor
Masanori Sakata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8240978A priority Critical patent/JPS559449A/en
Publication of JPS559449A publication Critical patent/JPS559449A/en
Pending legal-status Critical Current

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  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To prevent the generation of cracks and improve wetproof property by heat treatment and intensification of CVDSiO2 film coated on PSG.
CONSTITUTION: Oxidized film 12, PSG 13, CVDSiO2 14 are layed on one another on a base plate 11 of p-type Si, which is then heat-treated at 900°C for 20 minutes in N2 gas. Subsequent treatment in steam spray of 950°C for 20 minutes intensifies SiO2 14. After Al wire 15 is formed and coated with CVDSiO2 16, a hole is pierced only on a joining pad on Al wire. This structure constitutes a device with good wetproof property.
COPYRIGHT: (C)1980,JPO&Japio
JP8240978A 1978-07-05 1978-07-05 Producing method of semiconductor device Pending JPS559449A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8240978A JPS559449A (en) 1978-07-05 1978-07-05 Producing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8240978A JPS559449A (en) 1978-07-05 1978-07-05 Producing method of semiconductor device

Publications (1)

Publication Number Publication Date
JPS559449A true JPS559449A (en) 1980-01-23

Family

ID=13773783

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8240978A Pending JPS559449A (en) 1978-07-05 1978-07-05 Producing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS559449A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62191861U (en) * 1987-04-24 1987-12-05
US6900071B2 (en) 2001-07-26 2005-05-31 Mitsubishi Denki Kabushiki Kaisha Substrate and method for producing the same, and thin film structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62191861U (en) * 1987-04-24 1987-12-05
US6900071B2 (en) 2001-07-26 2005-05-31 Mitsubishi Denki Kabushiki Kaisha Substrate and method for producing the same, and thin film structure

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