JPS5596680A - Method of fabricating mos semiconductor device - Google Patents
Method of fabricating mos semiconductor deviceInfo
- Publication number
- JPS5596680A JPS5596680A JP389579A JP389579A JPS5596680A JP S5596680 A JPS5596680 A JP S5596680A JP 389579 A JP389579 A JP 389579A JP 389579 A JP389579 A JP 389579A JP S5596680 A JPS5596680 A JP S5596680A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sio
- gate
- mask
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 10
- 229910052681 coesite Inorganic materials 0.000 abstract 5
- 229910052906 cristobalite Inorganic materials 0.000 abstract 5
- 239000000377 silicon dioxide Substances 0.000 abstract 5
- 229910052682 stishovite Inorganic materials 0.000 abstract 5
- 229910052905 tridymite Inorganic materials 0.000 abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 2
- 229910052760 oxygen Inorganic materials 0.000 abstract 2
- 239000001301 oxygen Substances 0.000 abstract 2
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To obtain an electrode with desired with for a MOS semiconductor device by forming SiO2 corresponding to the gate length at the polycrystal silicon film forming a laminated film when forming a gate electrode through a gate oxide film on a semiconductor substrate and using the film for a mask.
CONSTITUTION: A thick field SiO2 film 2 is coated on the end of a semiconductor substrate 1, and a thin gate SiO2 film 3 is coated on the substrate 1 as surrounded with the film 2. Polycrystal silicon film 4, Si3N4 film 5, polycrystal silicon film 6, and Si3N4 film 7 are sequentially laminated on the entire surface. Then, the films 7, 6 of one side of the source and drain regions are removed, heat treated in humidified oxygen atmosphere, and the film 6 is oxidized from the exposed end surface to thereby obtain SiO2 film 8 having the length corresponding to the gate length. Then, both the films 7 and 6 are removed, with residued film 8 as a mask the film 5 is etched and removed, and the film 5 thus further residued is as a mask to be heat treated in humidified oxygen atmosphere. Thus, the exposed portion of the film 4 is converted to SiO2 film 41, and the film 41 is then etched and removed. Thereafter, the film 5 is removed to thereby expose the polycrystal gate electrode 4 under the film 5.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP389579A JPS5596680A (en) | 1979-01-19 | 1979-01-19 | Method of fabricating mos semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP389579A JPS5596680A (en) | 1979-01-19 | 1979-01-19 | Method of fabricating mos semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5596680A true JPS5596680A (en) | 1980-07-23 |
Family
ID=11569912
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP389579A Pending JPS5596680A (en) | 1979-01-19 | 1979-01-19 | Method of fabricating mos semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5596680A (en) |
-
1979
- 1979-01-19 JP JP389579A patent/JPS5596680A/en active Pending
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