JPS5596685A - Hetero junction photodiode - Google Patents
Hetero junction photodiodeInfo
- Publication number
- JPS5596685A JPS5596685A JP542979A JP542979A JPS5596685A JP S5596685 A JPS5596685 A JP S5596685A JP 542979 A JP542979 A JP 542979A JP 542979 A JP542979 A JP 542979A JP S5596685 A JPS5596685 A JP S5596685A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sno
- adhered
- thin film
- adhered onto
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 125000005842 heteroatom Chemical group 0.000 title abstract 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 10
- 239000010408 film Substances 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 3
- 239000010409 thin film Substances 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 238000005286 illumination Methods 0.000 abstract 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 229910001887 tin oxide Inorganic materials 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 229910003437 indium oxide Inorganic materials 0.000 abstract 1
- 230000000379 polymerizing effect Effects 0.000 abstract 1
Landscapes
- Light Receiving Elements (AREA)
Abstract
PURPOSE: To prevent decrease of photoelectric conversion efficiency of a hetero junction photodiode under high illumination by polymerizing a transparent thin film having an indium oxide and a tin oxide at special ratio on the entire surface of a tin oxide film adhered onto the surface of a silicon substrate.
CONSTITUTION: An SnO2 film 32 is adhered onto the surface of an n-type silicon substrate 11, and an ohmic electrode 14 is adhered to the back surface of the substrate 11. A transparent thin film 15 containing 95% by weight of In2O3 and 5% by weight of SnO2 is adhered onto the entire surface of an SnO2 film 12, and a metallic electrode 13 is adhered to the position in the vicinity of one corner on the surface of the thin film 15. Thus, the specific resistance of the entire polymerized layer 16 having the films 12 and 15 is reduced approx. 1/30 as compared with the case of single SnO2 film 12, and the resistance in planar direction of the layer 16 is remarkably reduced. Accordingly, the convertion efficiency is not lowered even under high illumination.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP542979A JPS5596685A (en) | 1979-01-18 | 1979-01-18 | Hetero junction photodiode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP542979A JPS5596685A (en) | 1979-01-18 | 1979-01-18 | Hetero junction photodiode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5596685A true JPS5596685A (en) | 1980-07-23 |
Family
ID=11610931
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP542979A Pending JPS5596685A (en) | 1979-01-18 | 1979-01-18 | Hetero junction photodiode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5596685A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57157578A (en) * | 1981-03-23 | 1982-09-29 | Sumitomo Electric Ind Ltd | Active crystalline silicon thin film photovoltaic element |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5034183A (en) * | 1973-07-27 | 1975-04-02 |
-
1979
- 1979-01-18 JP JP542979A patent/JPS5596685A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5034183A (en) * | 1973-07-27 | 1975-04-02 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57157578A (en) * | 1981-03-23 | 1982-09-29 | Sumitomo Electric Ind Ltd | Active crystalline silicon thin film photovoltaic element |
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