JPS5596768A - Solid image pickup element - Google Patents
Solid image pickup elementInfo
- Publication number
- JPS5596768A JPS5596768A JP292879A JP292879A JPS5596768A JP S5596768 A JPS5596768 A JP S5596768A JP 292879 A JP292879 A JP 292879A JP 292879 A JP292879 A JP 292879A JP S5596768 A JPS5596768 A JP S5596768A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- image pickup
- pickup element
- solid image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007787 solid Substances 0.000 title abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 5
- 229910052710 silicon Inorganic materials 0.000 abstract 5
- 239000010703 silicon Substances 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 239000013078 crystal Substances 0.000 abstract 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
PURPOSE: To improve the characteristic of a solid image pickup element including a photo sensor, etc., by deposition-forming the electrode group consisting of the superposed layer of a poly-crystal silicon film and a transparent conductive film on the silicon oxide film, which is deposition-formed on a silicon substrate.
CONSTITUTION: In solid image pickup element 41, the first electrode 44 is formed on the first silicon oxide film 43 deposition-formed on one main face of silicon substrate 42, and the second silicon oxide film 45 is so formed that the upper face and the side face of electrode 44 may be covered with film 45, and the second electrode 46 is so interposed that film 45 may be interposed and electrode 46 may be caused to deposit to film 43 and be extended onto electrode 44. Then, the first poly-crystal silicon films 441 and 461 and mixture layers 442 and 462 of transparent conductive films such as In2O3 are formed together with electrodes 44 and 46, and the second poly-crystal silicon films 443 and 463 are formed on them.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP292879A JPS5596768A (en) | 1979-01-17 | 1979-01-17 | Solid image pickup element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP292879A JPS5596768A (en) | 1979-01-17 | 1979-01-17 | Solid image pickup element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5596768A true JPS5596768A (en) | 1980-07-23 |
Family
ID=11542996
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP292879A Pending JPS5596768A (en) | 1979-01-17 | 1979-01-17 | Solid image pickup element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5596768A (en) |
-
1979
- 1979-01-17 JP JP292879A patent/JPS5596768A/en active Pending
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